Method for Producing an Accumulator and Use of the Accumulator

Publication: WO2017162222A1
Published: 2017-09-28
Family Size: 7
Granted: Yes (2/7)

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes an innovative method for manufacturing electrochemical memory devices (accumulators) using inexpensive printing technologies (like inkjet printing). The memory cells utilize a crossbar architecture, where two conductive tracks intersect on a non-conductive substrate, at whose intersections a porous dielectric containing redox-active molecules is placed. By applying a voltage, a redox reaction at these intersections can store, erase, or rewrite bits of information. The process allows for low-cost, scalable manufacturing and supports ROM, WORM, and rewritable memory, even with multi-level (beyond binary) data storage.

Use CasesContent extracted from patent full text and abstract with AI.

  • Printed RFID or NFC tags for smart packaging, logistics, and inventory management
  • Integration into Internet of Things (IoT) devices as low-cost non-volatile memory
  • Traceability features for consumables (like food, pharmaceuticals), adding production/expiry info on packaging
  • Wearable or disposable electronics that require cheap, reliable memory
  • Environmental monitoring sensors where cost-effective memory is essential
  • Smart labels for supply chain transparency and anti-counterfeiting

BenefitsContent extracted from patent full text and abstract with AI.

  • Significantly reduces the production cost of memory devices (less than 1 cent per tag) by using printing methods, eliminating the need for complex silicon-based processes
  • Enables memory to be printed onto flexible substrates, broadening application to packaging and irregular surfaces
  • Low energy consumption for reading and writing, extending use in passive or remotely powered devices (e.g., RFID/NFC)
  • Compatible with environmentally benign materials, facilitating safe use in food and medical packaging
  • Can store multiple memory types: ROM, WORM, and rewritable forms, as well as multi-level (non-binary) data, greatly increasing storage density per area
  • Eliminates the need for reference electrodes and reduces risks of leakage, improving reliability in practical applications
  • Flexible design allows for customization (multi-level coding, adjustable capacity) depending on the application's needs

Technical Classifications (CPCs)

Main Classifications

Electrical & Electronic Tech

Physics & Measurement

Sub Classifications

Information Storage

Semiconductor & Solid-State Devices

CPC Codes

G11C13/0009G11C13/004H10B63/80H10K10/50H10K10/88H10K71/13H10N70/021H10N70/841

Inventors & Applicants

Applicants

Forschungszentrum Juelich Gmbh

Patent Abstract

The invention relates to a method for producing an electrochemical accumulator, characterized by the following steps: a) providing a non-conductive substrate; b) mounting a first conductor track made of conductive material on the substrate; c) mounting a porous dielectric with redox-active molecules in the form of points on the first conductor track; d) mounting a second conductor track orthogonally to the first conductor track, wherein the conductor tracks have an electrode function at the intersection point, between which the dielectric is arranged; e) mounting a passivation layer on the substrate, the first conductor track, the dielectric and the second conductive track, wherein the first and the second conductor tracks form an accumulator with the dielectrics arranged therebetween at the intersection point, in which the redox reaction of the redox-active molecules on the electrodes is activated by applying voltage to the conductor tracks for generating a bit. The invention also relates to different accumulators and to the uses thereof.

Key Information

Publication No.

WO2017162222A1

Family ID

58707265

Publication Date

2017-09-28

Application No.

DE2017000063W

Application Date

2017-03-08

Priority Date

2016-03-23

Granted

Yes (2/7)

Possible Cooperation

For further information please contact the transfer office.