Production of strained layer on strain-compensated layer stacks with small defect density, comprises arranging relaxed silicon-germanium buffer layer on silicon substrate and arranging intermediate layer on relaxed buffer layer

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This patent describes a method to produce a high-quality strained silicon or germanium layer on a specially engineered, strain-compensated layer stack, which reduces the density of defects. The process involves stacking a relaxed silicon-germanium buffer layer and a silicon-germanium intermediate layer on a silicon substrate. By carefully tuning the stresses in each layer, the overall strain in the stack is balanced, preventing defects from propagating into the top strained layer.

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• Manufacturing high-performance semiconductor devices such as transistors and integrated circuits.
• Creating advanced photonic devices that require defect-free semiconductor layers.
• Improving efficiency and reliability in microelectronics and nanoelectronics manufacturing.
• Producing wafers for next-generation computing and communication technologies.

BenefitsContent extracted from patent full text and abstract with AI.

• Reduces defect density in strained layers, resulting in higher-quality semiconductor components.
• Enables fabrication of advanced electronic devices with improved performance and longevity.
• Supports integration of different semiconductor materials, enhancing flexibility in device engineering.
• Improves yield and manufacturability due to lower defect rates.

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Patent Abstract

The production of a strained silicon or germanium layer (14) on strain-compensated layer stacks with small defect density, comprises arranging a relaxed silicon-germanium buffer layer (12) on a silicon substrate (11) and arranging a silicon-germanium intermediate layer (13) on the relaxed buffer layer. The intermediate layer, the buffer layer and the strained layer with in each case are selected a force per length unit, in which the total force per unit length in the layer stacks is minimized by compensation. The production of strained silicon or germanium layer (14) on a strain-compensated layer stacks with small defect density, comprises arranging a relaxed silicon-germanium buffer layer (12) on a silicon substrate (11) and arranging silicon-germanium intermediate layer (13) on the relaxed buffer layer. The intermediate layer, the buffer layer and the strained layer with in each case are selected a force per length unit, in which the total force per unit length in the layer stacks is minimized by compensation. Between the buffer layer and the intermediate layer, a fissure in the lattice parameter in growth direction is selected, so that the propagation of threading dislocations in the strained layer arranged on an intermediate layer is prevented. The intermediate layer has a compressive stress and the buffer layer has a tensile stress. The buffer layer is arranged with regard to the germanium content graded on the substrate. The germanium content between the buffer layer and the intermediate layer is 3-5 at.%. The germanium concentration in the intermediate layer is 12 at.% and in the buffer layer is 23 at.% at the boundary surface to the intermediate layer lying opposite to the substrate. Independent claims are also included for the following: (1) a layer stack; (2) a component comprising a layer stack; and (3) wafer bonding.