Sputtering Sources for High-Pressure Sputtering with Large Targets and Sputtering Methods

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The invention describes an improved sputtering head and method for high-pressure sputtering processes involving large targets. The sputtering head uses closely spaced magnetic poles (as close as 1 mm apart) to generate highly localized magnetic fields, which enhance the control and uniformity of plasma ionization during the sputtering process at elevated gas pressures. This results in a more homogenous layer thickness across the surface of the substrate and allows the use of larger sputtering targets. The system also includes solid-state insulators to prevent unwanted plasma formation and electrical discharges, enhancing operational stability.

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• Uniform coating of large substrates in semiconductor manufacturing (e.g., displays, photovoltaic panels, wafers).
• Production of high-quality thin films for optical devices, sensors, and electronic components.
• Sputtering of challenging materials such as oxides or other stoichiometric compounds requiring high-pressure processing.
• Creation of multilayer systems or laterally-structured films with highly uniform layer thicknesses.
• Mass-production coating processes for flexible or band-shaped substrates (roll-to-roll processes).

BenefitsContent extracted from patent full text and abstract with AI.

• Significantly improved uniformity of deposited film thickness across large substrate areas.
• Ability to use larger sputter targets, enabling higher throughput and cost efficiency.
• Enhanced process control, especially at high gas pressures, supporting advanced material systems.
• Reduced inhomogeneities and instabilities in plasma, minimizing defects and improving product quality.
• Operational stability with solid-state insulators to prevent electrical discharges, allowing higher sputtering pressures.
• Precise control over local material removal, enabling custom patterning or zone protection on targets.

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Patent Abstract

The invention involved the development of a sputtering head with a receiving area for a sputtering target (target receiving area). The sputtering head has one or more magnetic field sources for generating a stray magnetic field. According to the invention, the magnetic north pole and south pole of at least one magnetic field source between which the stray field forms are 10 mm or less apart, preferably 5 mm or less and most particularly preferably about 1 mm. It was realized that, specifically when sputtering under a high sputtering gas pressure of 0.5 mbar or more, such a locally active magnetic field allows the degree of ionization of the sputtering plasma, and consequently also the rate of removal on the sputtering target, to be locally adapted. This allows the thickness of the layers obtained to be more homogeneous over the surface of the substrate. Advantageously, the sputtering head additionally has a solid-state insulator, which surrounds the main body with the target receiving area and the sputtering target (all at potential) and electrically insulates them from the shielding that spatially restricts the removal of material to the sputtering target (at earth).