Prestressed Building Element and Method for Manufacturing

Simple SummaryContent extracted from patent full text and abstract with AI.

The patent describes a semiconductor or oxide-based device in which the functional (active) layer is tensioned by a special stress-inducing material (stressor), such as silicon nitride, titanium nitride, or SiGe. The functional layer is decoupled from the substrate in the region where it performs its electronic or optoelectronic functions, allowing higher strain to be introduced, which enhances the electronic properties. The patent also provides a manufacturing method where the strain is introduced after the functional layer is deposited, rather than during layer growth, making fabrication easier and more flexible. Additional materials can be used to maintain the strain once the stressor is removed.

Use CasesContent extracted from patent full text and abstract with AI.

• High-performance nano-transistors (FinFETs, nanowire transistors) with improved speed and lower power consumption.
• Semiconductor lasers or LEDs, particularly using strained Germanium for efficient light emission.
• Highly sensitive photodetectors and optoelectronic sensors relying on direct bandgap materials.
• Advanced tunnel field-effect transistors (TFETs) for low-power electronics.
• Resistive memory devices where strain in oxide layers alters switching properties.
• Integration of new semiconductor materials (e.g. GeSn or III-V compounds) on silicon platforms.

BenefitsContent extracted from patent full text and abstract with AI.

• Greatly enhances the charge carrier mobility, resulting in faster and more energy-efficient transistors.
• Allows creation of direct bandgap materials from traditionally indirect semiconductors (like Ge), enabling light-emitting devices on silicon.
• By introducing strain after deposition, the process avoids difficulties of growing films directly under tension, increasing manufacturing yield and flexibility.
• Strain can be locally concentrated and precisely controlled in the device's active area, enabling novel device designs.
• The method is compatible with a wide range of semiconductor and oxide materials, making it universally applicable for modern micro- and nanoelectronics.
• Can significantly reduce energy consumption, which is essential for green IT and battery-powered systems.
• Enables new classes of heterostructures and device functionalities not possible with conventional fabrication methods.

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The component comprises a substrate (11) and a tensioned semiconducting functional layer (13). According to the invention, the functional layer (13) is decoupled from the substrate, at least in the effective region that performs the electronic or optoelectronic function of the component (II), and is tensioned by means of a tensioned stressor material (14) arranged at least in one sub-region on the functional layer, and/or said functional layer is coupled to the substrate by means of a mounting material, which, when the functional layer is present and tensioned, has been arranged between the functional layer and substrate. The functional layer can initially be produced without being under tension and only tensioned by the application of the stressor material (14). This tensioning is maintained for as long as the stressor material remains on the functional layer. However, it can also be preserved by arranging a mounting material between the functional layer and the substrate, said mounting material firmly coupling the functional layer to the substrate. The core of the method is analogously that a tensioned stressor material is applied to the functional layer at least in one sub-region, and at least the effective region of the functional layer, which performs the electronic function of the component, is decoupled from the substrate.