Device and Method for Operating a Semiconductor Spin Qubit Quantum Computer

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This patent describes a device and method for operating a quantum computer that uses semiconductor spin qubits. The quantum chip features complex gate electrode structures that form shuttling lanes, manipulation zones, and T-junctions, enabling precise movement and control of qubits within a semiconductor heterostructure such as Si/SiGe. By calibrating and applying specific voltage sequences to these electrodes, qubits can be shuttled along selected paths, brought to manipulation zones for quantum operations, and dynamically controlled to optimize coherence and reduce error rates.

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• Scalable quantum computing systems based on semiconductor spin qubits.
• Implementation of error-corrected quantum algorithms and surface code protocols.
• Advanced research in quantum information and computation.
• Quantum processors for commercial or academic quantum computers.
• Flexible and reliable architectures for NISQ (Noisy Intermediate Scale Quantum) and universal quantum computers.

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• Highly scalable architecture that addresses the wiring (fan-out) problem of quantum chips.
• Enables high-fidelity qubit shuttling and manipulation through dynamic, path-based movement.
• Supports flexible, two-dimensional layouts suitable for large quantum processors.
• Facilitates integration with established silicon semiconductor technologies, reducing costs and manufacturing complexity.
• Allows for dynamic adjustment of qubit control parameters, improving error rates and operational reliability.
• Supports advanced quantum error correction techniques (e.g., surface codes) and efficient algorithm execution.
• Provides robust control over qubit coherence and fidelity through calibration and dynamic voltage adjustment.

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Patent Abstract

A method, using a microprocessor, of operating a quantum chip (10), wherein the quantum chip comprises a semiconductor heterostructure (12) and a plurality of gate electrodes (50) arranged on the semiconductor heterostructure (12) to provide a plurality of shuttling lanes (16) for moving a plurality of qubits along a plurality of paths (45); the plurality of gate electrodes (50) are further arranged to form a plurality of manipulation zones (20) and a plurality of T-junctions (18), any one of the plurality of manipulation zones (20) comprising an interface (25), at which two of the plurality of shuttling lanes (16) meet one another, and any one of the plurality of T-junctions (18) comprising a junction (28), at which one of the plurality of shuttling lanes (16) joins another one of the plurality of shuttling lanes (16); the method comprising the steps of calibrating voltage parameters pertaining to voltages to be applied to the plurality of gate electrodes (50), one of the parameters pertaining to one of the plurality of gate electrodes (50); selecting a path (45s) along selected ones (16-1, 16- 2,, 16-n) of the plurality of shuttling lanes (16) between a position (S) of a qubit and a selected manipulation zone (20); determining, based on the voltage parameters, for any one of the selected ones (16-1, 16-2,, 16-n) of the plurality of shuttling lanes (16), at least one shuttling voltage time course to be applied to the associated subset (50i) of the plurality of gate electrodes (50), to move the qubit from the current position to the selected manipulation zone (20); moving the qubit along the selected ones (16-1, 16-2,, 16-n) of the plurality of shuttling lanes (16) from the current position (S) to the selected manipulation zone (20), by applying the shuttling voltage time courses to subsets (50-1, 50-2,, 50-n) of the plurality of gate electrodes (50), associated with the selected ones (16-1, 16-2,, 16-n) of the plurality of shuttling lanes (16); determining, based on the voltage parameters, for the selected manipulation zone (20), a manipulation voltage time course to be applied to the associated subsets (50-n, 50-s) of the plurality of gate electrodes (50), to manipulate the qubit; and manipulating the qubit at the selected manipulation zone (20) by applying at least one manipulation voltage time course to the subsets (50- n,50-s) of the plurality of gate electrodes (50), associated with the selected manipulation zone (20).