Three- or Multi-Gate Device Based on the Tunnel Effect

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This invention describes a new kind of electronic component—a triple-gate (or multi-gate) device that operates based on the quantum tunneling effect instead of traditional semiconductor principles. It consists of at least two electrodes separated by a tiny gap through which electrons can tunnel. Importantly, it employs electric fields across this gap to alter the path of these tunneling electrons, thereby controlling the tunneling current with high precision. Unlike conventional transistors, this device does not require semiconductors and can be built on insulating or flexible substrates, even using a variety of materials (including plastics or superconductors). It functions as a fast-switching, energy-efficient transistor or electronic switch.

Use CasesContent extracted from patent full text and abstract with AI.

• Ultra-fast and energy-efficient transistors for next-generation computer processors or advanced logic circuits.
• High-frequency electronics, including radio-frequency (RF), microwave, or terahertz communications.
• Flexible or plastic electronics for wearable devices, sensors, or displays due to compatibility with plastic substrates.
• Spintronic devices leveraging ferromagnetic electrodes and quantum properties for new types of memory or logic systems.
• Measurement and analysis tools for probing electron mobility at the nanoscale in research and material science.
• Low-power superconducting electronics for quantum computing or ultra-efficient data centers.

BenefitsContent extracted from patent full text and abstract with AI.

• Enables extremely fast switching speeds, potentially much faster than conventional MOSFETs.
• Significantly reduces power loss and heat generation, especially when using superconducting electrodes.
• Not limited by the material properties of semiconductors—works even on insulating or plastic substrates, allowing flexible and wearable electronics.
• Allows for greater miniaturization, with feasible device dimensions of just a few nanometers.
• Provides a much wider dynamic range than traditional semiconductor transistors, avoiding signal saturation and information loss.
• Facilitates use in high-temperature environments since device function doesn't depend on semiconductor doping, reducing sensitivity to thermal degradation.
• Low electronic noise and heat dissipation due to possible vacuum or gas-filled tunneling gaps.
• Opens possibilities for new types of spintronic and quantum devices due to unique electron pathway control.

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Patent Abstract

The invention relates to a triple-gate or multi-gate component based on the quantum mechanical tunneling effect. Said component comprises at least two tunneling electrodes on a substrate that are separated by a gap through which electrons can tunnel. According to the invention, the component comprises means for applying such an electric field to the gap that the path of an electron tunneling between the tunneling electrodes is extended as a result of the deflection caused by said field. In general, means can also be provided for applying an electric field to the gap, said electric field having a field component that extends perpendicular to the direction of the tunneling current between the tunnel electrodes and parallel to the substrate. Since the tunneling current between the tunneling electrodes exponentially depends on the distance traveled by the electrons in the gap, such an electric field represents a great inverse amplification factor for the tunneling probability and thus the tunneling current that is to be controlled. Such a triple-gate or multi-gate component can act as a very quickly switching transistor having high amplification and does not have to be semiconducting.