Planar Electrically Floating Qubit Circuit Structure

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention describes a planar, electrically floating qubit circuit structure where the series capacitance between the main electrode regions and a ground electrode is deliberately designed to be greater than the self-capacitance of the central Josephson junction. The layout utilizes geometric arrangements, such as symmetric electrode strips and meandering or orthogonal paths, to optimize coupling and minimize parasitic effects, improving qubit coherence and enabling more efficient quantum circuit design compared to prior solutions that relied on dominant direct shunt capacitors.

Use CasesContent extracted from patent full text and abstract with AI.

• Quantum computing hardware, specifically in constructing superconducting quantum processors utilizing transmon or SQUID-based qubits.
• Development of more stable quantum bits (qubits) for large-scale quantum computing systems.
• Implementation of low-noise, high-coherence qubits in quantum communication networks.
• Integration into complex quantum architectures where reduced crosstalk and improved coupling control between qubits and resonators is required.

BenefitsContent extracted from patent full text and abstract with AI.

• Increased coherence times for qubits due to reduced coupling to dielectric defects and lower electrical field strengths.
• Simplified coupling implementation, facilitating easier connection to drivelines, other qubits, and resonators.
• Reduced parasitic crosstalk between adjacent qubits, enabling scalable quantum processor designs.
• Compact and flexible geometry allows for straightforward fabrication using standard planar technologies.
• Lower parasitic coupling losses in 3D-integrated systems.
• Eliminates need for large external shunt capacitors, improving integration and circuit density.

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Patent Abstract

A planar electrically floating qubit circuit structure comprising a Josephson junction region (1) galvanically coupled to first and second electrode regions (3, 3') and a ground electrode region (4) is configured so as to result in a series capacitance of said first and second electrode regions (3, 3') to said ground electrode region (4) that is greater than the self-capacitance of said Josephson junction region (1).