Method for the Production of Layers of Reram Memories, and Use of an Implantation Device

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This invention describes a method for manufacturing layers in resistive random-access memory (ReRAM) devices using ion implantation. In the process, transition metal oxide (TMO) layers are applied to electrodes and then selectively bombarded with ions (such as oxygen or nitrogen) using an ion implantation device. This technique precisely introduces specific ions into the TMO layers, altering their electrical properties and optimizing the performance of ReRAM memory cells, while avoiding high-temperature treatments or high-voltage steps required by traditional methods.

Use CasesContent extracted from patent full text and abstract with AI.

• Non-volatile memory devices for consumer electronics such as smartphones, laptops, and tablets
• High-density storage solutions in data centers and servers
• Low-power memory chips for Internet of Things (IoT) devices
• Next-generation embedded memory in microcontrollers and processors
• Memory banks for AI accelerators and edge computing hardware

BenefitsContent extracted from patent full text and abstract with AI.

• Enables further miniaturization of ReRAM memory devices below 20 nm for higher storage densities
• Reduces manufacturing costs and complexity by eliminating energy-intensive and costly high-temperature annealing and forming processes
• Allows precise control over the chemical and electrical characteristics of memory layers by accurately implanting ions into TMO layers
• Improves memory cell efficiency, particularly at low operating voltages, yielding higher reliability and performance
• Avoids damage to memory cells and adjacent structures during production, preserving device integrity
• Increases flexibility in memory design by allowing various TMOs and ion types to be used and tailored to specific requirements
• Maintains or improves CMOS device performance by not subjecting substrates to harmful thermal loads

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Patent Abstract

The invention relates to a method for producing layers of ReRAM memories and the use of an implantation device. According to the invention, in order to produce ReRAM memories, TMO layers are applied to an electrode in a desired sequence, a process during which at least one TMO layer is bombarded with ions, e.g. oxygen ions, by means of an ion implantation device such that ions are imported into said TMO layer.