Method for applying a first metal onto a second metal, an isolator or semiconductor substrate, and the respective binding units
Simple SummaryContent extracted from patent full text and abstract with AI.
This patent describes a chemical method for attaching a metal (such as gold, copper, or silver) onto another metal, an insulator (like glass or silicon oxide), or a semiconductor substrate using a Diels-Alder reaction with inverse electron demand. The process involves modifying surfaces with specific binding units that can react with one another to create a strong, covalent connection between the metal layer and the substrate. This approach is particularly suitable for applications where gentle processing is needed and strong adhesion is required, such as in printed electronics and thin film devices.
Use CasesContent extracted from patent full text and abstract with AI.
- Fabrication of printed electronic circuits and devices, especially those based on thin-film technology.
- Production of advanced sensors, including biosensors and electronic sensors that require robust metal contacts.
- Creation of molecular electronics and bioelectronics components where delicate handling and specific attachment are crucial.
- Manufacture of flexible or plastic electronics where traditional metal deposition techniques may cause damage.
- Building reliable metal-insulator or metal-semiconductor interfaces in microelectronic assemblies.
BenefitsContent extracted from patent full text and abstract with AI.
- Provides strong, stable covalent bonding between metals and various substrates, improving device reliability.
- Avoids harsh deposition techniques (like sputtering or evaporation), reducing damage to sensitive substrates.
- Enables selective and exclusive attachment, minimizing unwanted chemical interaction with existing device components.
- Allows for the integration of additional functional groups (e.g., for charge storage, magnetic properties, sensing) through modular surface chemistry.
- Improves yield and process efficiency due to fast, high-yield surface reactions.
- Can compensate for surface roughness, resulting in conformal and uniform metal layers.
- Versatile method compatible with a wide range of metals and dielectric or semiconductor surfaces.
Technical Classifications (CPCs)
Main Classifications
Chemistry & Materials Science
Electrical & Electronic Tech
Sub Classifications
Dyes, Paints & Adhesives
Organic Chemistry
Semiconductor & Solid-State Devices
CPC Codes
Inventors & Applicants
Inventors
Applicants
Deutsches Krebsforsch
Forschungszentrum Juelich Gmbh
Patent Abstract
The present invention concerns a method for applying a first metal onto a second metal, an isolator or semiconductor substrate by a Diels-Alder reaction, in particular a Diels-Alder reaction with inverse electron demand. The present invention further concerns the binding units L 1960 and F 160.
Key Information
Publication No.
EP2423191A1
Family ID
43243060
Publication Date
2012-02-29
Application No.
EP10008481A
Application Date
2010-08-13
Priority Date
2010-08-13
Granted
Yes (2/7)
Possible Cooperation
For further information please contact the transfer office.