Electrode for Plasma Generation, Plasma Chamber with this Electrode, and Method for In Situ Analysis or In Situ Processing of a Layer or the Plasma

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The invention provides a radio-frequency (RF) electrode for generating plasma in a plasma chamber, featuring an integrated optical feedthrough (an opening or optical path through the electrode). This design allows electromagnetic radiation (such as laser light) to pass through the electrode directly to the plasma or substrate layer, enabling real-time (in situ) analysis or processing of the layer or the plasma during deposition or etching processes. The system may include lenses, protective glass, and shielding to maintain homogeneous plasma conditions while enabling optical access.

Use CasesContent extracted from patent full text and abstract with AI.

• In situ Raman spectroscopy for real-time monitoring of thin film growth in semiconductor manufacturing (e.g., silicon solar cell production)
• Real-time plasma diagnostics and control during chemical vapor deposition or etching processes
• Quality assurance and process optimization in microelectronics fabrication
• In situ laser processing or annealing of deposited layers within a plasma chamber
• Development and research in plasma-assisted material processing applications
• Determination of gas concentrations within the plasma in real time
• Improved feedback loops for industrial process automation in plasma reactors

BenefitsContent extracted from patent full text and abstract with AI.

• Enables direct, real-time optical analysis and processing of both the plasma and substrate layers during operation (in situ)
• Supports a wide range of analytical techniques (e.g., Raman, emission, reflection spectroscopy) with no restrictions on process type or method
• Improves accuracy and relevance of measurements by analyzing central, production-relevant substrate areas rather than peripheral regions
• Maintains plasma homogeneity through specialized shielding and optimized electrode design
• Flexible configuration allows the integration of lenses, protective elements, and adjustable components for different measurement setups
• Facilitates both analysis and active processing (such as localized laser treatment) without interrupting vacuum or plasma conditions
• Reduces process errors and enables better quality control, thus potentially enhancing yield and reducing manufacturing costs

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Patent Abstract

The invention relates to an RF electrode for producing a plasma in a plasma chamber, characterized by an optical lead-through. The invention further relates to a plasma chamber, comprising an RF electrode and a counter-electrode having a substrate retainer for accommodating a substrate. For said plasma chamber, a high-frequency alternating field can be developed between the RF electrode and the counter-electrode in order to produce the plasma. The chamber is characterized by an RF electrode having an optical lead-through. The invention further relates to a method for analyzing or processing a layer or a plasma in a plasma chamber in situ. In said method, the layer is arranged on a counter-electrode and an RF electrode is arranged on the side facing the layer. The method is characterized by the selection of an RF electrode having an optical lead-through, and by at least one step, in which electromagnetic radiation is conducted through the optical lead-through for the purpose of analyzing or processing the layer or the plasma, and by at least one further step, in which the scattered or emitted or reflected radiation is fed to an analyzing device.