Magnetoelectronic Components and Measurement Methods

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This patent describes advanced magnetoelectronic devices and a measurement method based on ferromagnetic materials in which massless magnetic domain walls can move rapidly along specially designed elongated structures, such as nanowires. By eliminating a physical limitation known as the Walker limit, these domain walls can travel faster and without the energy losses or pinning that were present in conventional devices. The invention also provides a new and simpler method to measure the non-adiabatic spin transfer parameter (β), which is key for spintronic device design.

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• High-speed non-volatile memory (like race track memory) with faster read/write operations.
• Magnetoelectronic logic gates for rapid information processing in integrated circuits.
• Magnetic sensors or actuators in advanced electronic devices.
• Measurement tools for fundamental research and characterization of spin transfer phenomena in ferromagnetic materials.
• Miniaturized memory or logic circuits for mobile and battery-powered electronics.

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• Enables significantly faster reading, storing, and processing of information compared to current magnetoelectronic devices.
• Removes technical bottlenecks such as the Walker limit and domain wall pinning, allowing higher device performance.
• Reduces energy consumption because lower current is required to move the domain walls.
• Enables practical use of previously theoretical massless domain walls, opening the door for new device architectures.
• Provides a simple, robust method to measure material parameters essential for spintronics research and engineering.

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Inventors & Applicants

Patent Abstract

Disclosed are magnetoelectronic components that comprise: at least one elongate operating structure which is made of a ferromagnetic material and along which magnetic domain walls can migrate; means for applying to this operating structure an electric current; and at least one magnetic field sensor for the magnetic field emitted by the operating structure. According to the invention, the operating structure is designed such that it comprises domain walls, the transverse magnetizing direction of which has no preferred direction in the center thereof in the plane perpendicular to the migration direction of the domain walls along the operating structure, and/or such that the operating structure can form massless domain walls. It was detected that the kinetic energy of this type of moving domain walls disappears, and hence they are not subject to the Walker limit nor to intrinsic pinning. As a result, the components can input, save or process and ultimately output information more quickly. The invention also relates to a method for measuring a non-adiabatic spin transfer parameter ß of a ferromagnetic material. This method was developed during the course of an in-depth study of the phenomena detected.