Method and Device for the Determination of a Measure of Band Gaps at Optoelectronic Components

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention describes a method and device for evaluating the band gap and stoichiometry of optoelectronic components, especially CIGS (copper indium gallium diselenide) solar cells and modules. The process involves generating light emission from the component, capturing images at two different spectral sensitivities (using different cameras or filters), and computing a quotient image. This quotient image, after calibration, provides a spatially resolved band gap (or stoichiometry) map to assess and improve the quality of the component.

Use CasesContent extracted from patent full text and abstract with AI.

• Quality control of CIGS solar cells and solar modules during manufacturing.
• Process optimization in the production of multi-element semiconductor devices.
• Automated, contactless detection of defects or inhomogeneities in optoelectronic devices.
• Research and development for monitoring material uniformity in photovoltaic cells.
• In-line quality assurance in large-scale solar module fabrication plants.

BenefitsContent extracted from patent full text and abstract with AI.

• Enables fast, contactless, and spatially resolved measurement of band gaps and stoichiometry.
• Reduces technical effort and speeds up quality assessment compared to traditional spectroscopy methods.
• Supports early detection and correction of production issues, increasing yield and efficiency.
• Allows for automated process monitoring and feedback, improving production consistency.
• Applicable to large-area devices and supports real-time, high-throughput inspection.

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Inventors & Applicants

Patent Abstract

The invention concerns a method for a control of the quality (lateral band gap and stoichiometric varication) of an optoelectronic component, in particular a CIGS solar module or CIGS solar cell, with the following steps: - a voltage V higher thanzero (or current or lightening) is applied on a CIGS solar cell (or a CIGS solar module or any circuit configuration of CIGS solar cells or CIGS solar modules) and the emitted light of the solar cell is photographed with a first camera (preferably silicon CCD camera) in order to thereby obtain a first image B1; - at the same CIGS solar cell (or CIGS solar module or any circuit configuration of CIGS solar cells or CIGS solar modules) the emitted light is photographed at same positive voltage (or current or lightening) with a second camera with different spectral sensitivity compared to the first camera (preferably a InGaAs camera or a Si CCD or a camera with a suitable filter) to obtain a second image B2; - it is calculated a quotient image Q from the both images B1 and B2. - By means of a suitable calibration, a band gap image (stoichiometry image) is calculated from the quotient image Q.