Dual-sided microstructured, position-sensitive detector

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes a semiconductor-based detector, specifically a silicon diode array, which is microstructured on both the n- and p-contact sides. Both contacts are divided into fine segments (down to 20-500 μm), allowing each segment to act as an independent sensor. Using advanced manufacturing techniques like ion diffusion, metal deposition, and photolithography, the detector achieves fine segmentation for high spatial resolution, high counting rates, and sensitive position and energy measurements of photons or charged particles.

Use CasesContent extracted from patent full text and abstract with AI.

• High-resolution X-ray and gamma-ray imaging for scientific research or medical diagnostics
• Charged particle tracking in nuclear or particle physics experiments
• Position-sensitive detectors in homeland security or port-of-entry scanning systems
• Industrial non-destructive testing and material analysis
• Radiation monitoring in space missions or high-radiation environments

BenefitsContent extracted from patent full text and abstract with AI.

• Enables very high spatial (position) resolution due to fine segmentation of contacts
• Supports high particle or photon counting rates, making it suitable for high-flux environments
• Improved signal-to-noise performance for precise energy and position determination
• Flexible manufacturing process allows for custom segment shapes and sizes
• Can provide 3D position information by exploiting drift timing in the detector
• Greater dynamic range and identification of different particle types compared to previous detectors

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Inventors & Applicants

Patent Abstract

The invention relates to a detector for determining the position and/or energy of photons and/or charged particles. Said detector comprises a plurality of diodes made of a semi-conductor material, n-contacts (1) and p-contacts (4), the n-contacts being provided by dividing an n-layer into individual segments. Said segments of the n-layer are 20-500 μm wide. Said detectors are produced by diffusing ions on the side of the semi-conductor material in order to produce an n-contact. A metallic layer is metallized thereon. Trenches are etched between the segments by means of lithography for the segmentation thereof. The inventive detector is high-powered and inter alia enables a high local resolution and high counting rates.