Method for Producing a Semiconductor Ceramic Material, Semiconductor Ceramic Material and a Semiconductor Component

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This invention describes a method for making a donor-doped semiconductor ceramic material with a perovskite structure, such as barium titanate (BaTiO3), featuring a non-linear electrical resistance (positive temperature coefficient, PTC) and a very fine, submicron grain size (most grains <800 nm, many <300 nm or even <200 nm). The process involves sintering a precursor material at temperatures no higher than 1200°C in a reducing atmosphere, then reoxidizing the grain boundaries at temperatures no higher than 600°C. The resulting ceramic material enables production of ultra-thin functional layers that can be used in smaller, miniaturized electronic components, particularly thermistors.

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• Manufacturing ultra-compact PTC thermistors for overcurrent and overtemperature protection in electronics.
• Production of thin and efficient temperature sensors integrated into densely packed electronic circuits.
• Fabrication of self-regulating micro-heaters and heating elements for precise temperature control in miniaturized devices.
• Development of multilayer ceramic capacitors and other advanced electronic components requiring fine microstructure ceramics.
• Integration into semiconductor components for use in mobile devices, automotive electronics, and IoT hardware.

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• Enables much smaller and thinner thermistor components, supporting further miniaturization of electronic devices.
• Improves the mechanical and electrical stability of PTC components compared to organic-based materials.
• Allows precise control over material properties, including resistance characteristics and switching temperature.
• Enhances the reproducibility and reliability of PTC effects even at submicron grain sizes, previously thought unattainable.
• Facilitates efficient and uniform doping/distribution of additives, resulting in high material consistency.
• Supports innovative manufacturing processes (like inkjet printing, SPS sintering), increasing fabrication efficiency and scalability.

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Patent Abstract

The invention relates to a method for producing a semiconductor ceramic material having a non-linear electrical resistance with a positive temperature coefficient, in which a precursor mass that comprises a donor-doped, ferroelectric material having a Perovskite structure and the general formula AxByO3 is sintered in a reduced atmosphere at temperatures of not more than 1200 °C. According to the invention, the sintered material has an average grain size in the sub-micrometer range. The sintered material is then reoxidized at its grain boundaries at temperatures of not more than 600 °C. The grain size of the precursor mass has an average primary grain size in the sub-micrometer range, preferably an average primary grain size of not more than 50 nm, more preferably of not more than 20 nm and even more preferably of not more than 10 nm. The semiconductor ceramic material produced by said method has also an average grain size in the sub-micrometer range, preferably in such a way that 80% of the grains are smaller than 800 nm, more preferably smaller than 300 nm and even more preferably smaller than 200 nm.