Process for Producing Graphene

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This patent describes a process for producing graphene by introducing carbon or a carbon compound into a carrier material (such as a transition metal) and then causing the carbon to segregate to the surface as graphene during thermal treatment at 200°C or higher. A key innovation is bringing the carrier material into contact with a stabilizing material during the process, forming a chemical compound that increases the stability of the carrier, reducing damage and enabling the formation of uniform, high-quality graphene layers over large areas as compared to previous methods. The process allows for better control over the number and thickness of graphene layers.

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• Manufacturing of high-quality, large-area graphene sheets for electronics
• Production of graphene nanoribbons for use in transistors and nanoscale devices
• Graphene-based transparent electrodes for displays and solar cells
• Improvement of high-frequency electronic devices like RF transistors
• Integration of graphene into sensors, flexible electronics, and wearables
• Fabrication of graphene-based membranes for filtration or energy storage devices

BenefitsContent extracted from patent full text and abstract with AI.

• Enables production of homogeneous, large-area graphene with controlled thickness
• Reduces damage to the carrier material during high-temperature processing, resulting in higher quality graphene
• Allows for precise control of carbon content via techniques like ion implantation
• Compatible with common semiconductor substrates such as silicon, supporting integration with existing electronics manufacturing processes
• Supports lateral structuring, enabling production of advanced graphene nanostructures (e.g., nanoribbons)
• Potential to produce both metallic and semiconducting graphene layers, broadened application scope
• Improved reproducibility and scalability for commercial manufacturing of graphene

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

In the process, carbon or a carbon compound is introduced into a carrier material, and the graphene is segregated at the surface or at an interface of the carrier material. Segregation by thermal treatment is understood to mean any segregation which is caused by heating the carrier material to a temperature of 200°C or higher, and then cooling it below this temperature again. It is unimportant here whether the segregation occurs during the heating phase, during the hold time or during the cooling phase. According to the invention, the carrier material is contacted with a stabilizing material and converted by thermal treatment at 200°C or higher, preferably at 500°C or higher, fully or partly to a chemical compound with the stabilizing material. It has been recognized that the stability of the chemical compound ensures that the area over which the graphene layer is formed, as a result of the thermal treatment needed for the segregation, undergoes much less damage than according to the prior art to date.