Method for determining band gap of amorphous material for determining e.g. chemical bond of crystalline solid body in technical application, involves evaluating temperature of band gap of amorphous material based on frequency

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This invention provides a method and device for accurately determining the band gap of amorphous materials (such as germanium antimony) by applying a direct current voltage to a nanoscale sample and analyzing the frequency of noise generated due to electron generation and recombination. The temperature-dependent band gap can be derived from this frequency, offering a non-destructive way to study material properties.

Use CasesContent extracted from patent full text and abstract with AI.

• Quality control and material analysis in semiconductor manufacturing
• Research and development of new amorphous or nanomaterials
• Characterizing thin films used in electronics and optoelectronics
• Assessing chemical bonds and electronic properties of disordered solids
• Calibration and validation of simulation models for amorphous materials

BenefitsContent extracted from patent full text and abstract with AI.

• Non-destructive measurement method preserves the integrity of samples
• Enables precise characterization of nanoscale amorphous materials
• Can support the development and verification of new advanced materials
• Improves understanding of fundamental electronic properties relevant for technical and commercial applications
• Suitable for integration into automated testing instruments

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The method involves subjecting a sample (5) of an amorphous material to direct current (DC) voltage, and measuring current flowing through the sample in a periodical manner. Frequency is determined from the current measurement, where sample generation-recombination noise occurs at the frequency. Temperature of a band gap of the amorphous material is evaluated based on the frequency, where the sample exhibits Cartesian space dimension that lies in a range of about 20-100 nanometer. A binary material i.e. germanium antimony, and a spectrum is formed from the frequency. Independent claims are also included for the following: (1) an amplifier for determining a band gap of an amorphous material (2) a device for determining a band gap of an amorphous material.