Memory with Tunnel Barrier and Method for Reading and Writing Information from and to This Memory

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This patent describes a new type of resistive memory device that utilizes a tunnel barrier in contact with a memory material whose properties can be changed by applying a write signal, such as an electric field. Changes in the memory material dramatically affect the tunnel resistance, allowing data to be stored and read reliably. The invention also provides a manufacturing method and approaches for reading and writing data that enhance reproducibility and performance compared to existing resistive memories.

Use CasesContent extracted from patent full text and abstract with AI.

• Non-volatile memory for computers and mobile devices to store user data persistently
• Replacement for traditional RAM and flash memory in electronic gadgets to increase memory density and reliability
• Memory arrays in data centers and servers to enhance speed and reduce energy consumption
• Mass storage devices such as solid-state drives (SSDs) with faster write/read cycles
• Embedded memory in IoT devices, sensors, or automotive electronics that require stable, energy-efficient, and long-lasting memory solutions
• Analog value storage for specialized hardware or neuromorphic computing architectures

BenefitsContent extracted from patent full text and abstract with AI.

• Significantly improved reproducibility in manufacturing compared to existing resistive memories, ensuring uniform device performance
• Much lower variability (spread) in resistance values, resulting in high data reliability and signal-to-noise ratio
• Enables both volatile and non-volatile memory applications, depending on material choices and configuration
• Lower power consumption—write and read signals require lower voltage and current, reducing energy use
• Faster write and erase speeds due to small, localized ion movements in the memory material
• Extended endurance with potentially more write/erase cycles than traditional resistive RAM/refined flash memory
• High integration potential for dense memory arrays, suitable for next-generation storage and universal memory solutions

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Patent Abstract

The invention provides a resistive memory which contains a tunnel barrier.  The tunnel barrier is in contact with a memory material which has a memory property that can be varied by means of a write-signal.  A change to the memory property has a powerful effect on the tunnel resistance due to the exponential dependence of the tunnel resistance on the parameters of the tunnel barrier, so that the information saved in the memory material can be read out.  As memory layer for example, a solid state electrolyte (ion conductor) is suitable, the ions of which can be moved by the write signal relative to the interface with the tunnel barrier.  But the memory layer can also be an additional tunnel barrier, for example, the tunnel resistance of which is variable by means of the write signal, for example, by displacement of a metal layer present in this tunnel barrier.  The invention also provides a method for saving and reading information to and from a memory.