Method for Producing a Memory, Memory, and Use of the Memory

Publication: DE102016003770A1
Published: 2017-10-05
Family Size: 1
Granted: No

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention describes a method for manufacturing an electrochemical memory device. The process involves arranging conductive tracks on a non-conductive substrate with a porous dielectric containing redox-active molecules at their intersection, thus creating a memory cell where information can be stored and read by controlling the redox reaction via applied voltage.

Use CasesContent extracted from patent full text and abstract with AI.

  • Non-volatile memory storage in computers and electronic devices
  • Data storage solutions for IoT and embedded systems
  • Miniaturized memory arrays for flexible or printed electronics
  • Memory components in neuromorphic or bio-inspired computing systems

BenefitsContent extracted from patent full text and abstract with AI.

  • Potential for low-cost, easily fabricated memory devices
  • Non-volatile storage enables data retention even without power
  • Scalable architecture suitable for high-density memory integration
  • Possibility of flexible or unconventional form factors due to substrate choice

Technical Classifications (CPCs)

Main Classifications

Electrical & Electronic Tech

Sub Classifications

Semiconductor & Solid-State Devices

CPC Codes

H10K10/50

Inventors & Applicants

Applicants

Forschungszentrum Juelich Gmbh

Patent Abstract

The invention relates to a method for producing an electrochemical storage device, characterized by the steps: a) a non-conductive substrate is provided; b) a first conductor track made of conductive material is arranged on the substrate; c) a porous dielectric with redox-active molecules is arranged in a point-like manner on the first conductor track; d) a second conductor track is arranged orthogonally to the first conductor track, wherein at the crossing point the conductor tracks have an electrode function, between which the dielectric is arranged; e) a passivation layer is arranged on the substrate, the first conductor track, the dielectric and the second conductor track, wherein the first and the second conductor track at their crossing point with the dielectric arranged therebetween form a storage device in which by applying voltage across the conductor tracks the redox reaction of the redox-active molecules at the electrodes is driven to generate a bit. Various storage devices and their uses are disclosed.

Key Information

Publication No.

DE102016003770A1

Family ID

59885562

Publication Date

2017-10-05

Application No.

DE102016003770A

Application Date

2016-04-01

Priority Date

2016-04-01

Granted

No

Possible Cooperation

For further information please contact the transfer office.