Method for Producing a Single-Crystalline Metal-Semiconductor Compound

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This invention describes a method for manufacturing a monocrystalline (single crystal) metal-semiconductor compound on the surface of a semiconductor layer. It involves depositing a thin metal-containing layer (no thicker than 5 nm) onto the semiconductor, followed by an annealing process to trigger the reaction and formation of the desired compound. The key innovation is carefully controlling the diffusion of metal into the semiconductor layer, either by limiting the layer thickness or by introducing diffusion barriers, resulting in a high-quality, uniform single-crystal interface with superior electrical and structural properties.

Use CasesContent extracted from patent full text and abstract with AI.

• Production of high-performance and low-resistance contacts for advanced semiconductor devices, such as CMOS transistors.
• Manufacture of optoelectronic components requiring precise metal-semiconductor interfaces, for example in photodetectors or lasers.
• Fabrication of strained silicon-germanium (SiGe) transistors or other group IV alloy-based electronic devices.
• Integration of new semiconductor materials (such as SiGeSn or GeSn) into cutting-edge integrated circuits and chips.
• Development of single-crystal metallic layers for nanoelectronics and future logic or memory devices.

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• Enables the creation of smooth, abrupt, and high-quality monocrystalline metal-semiconductor interfaces, reducing interface roughness and defects.
• Significantly lowers the electrical contact resistance, improving device performance and energy efficiency.
• Improves the thermal stability and reliability of metal contacts in semiconductor devices.
• Enables efficient manufacturing at lower temperatures, preserving the integrity of strained and sensitive semiconductor layers.
• Facilitates the adoption of new group IV semiconductor alloys in industry-standard device processes, supporting further miniaturization and performance scaling.

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Patent Abstract

The invention relates to a method for producing a monocrystalline metal/semiconductor compound on the surface of a semiconductive functional layer. A storage layer which contains the metal is first applied onto the functional layer. The reaction of the metal with the functional layer is then triggered by an annealing process. According to the invention, the storage layer terminates no farther than at a layer thickness of 5 nm starting from the surface of the functional layer, or the storage layer transitions into a region in which the metal diffuses slower than in the region directly adjoining the functional layer no farther than at said layer thickness. In this manner, the diffusion flux of the metal into the functional layer can be advantageously reduced. It has been recognized that the crystallization of the metal/semiconductor compound depends precisely on reducing the diffusion flux. The storage layer can comprise at least two layers which are separated from each other by a diffusion barrier, said layers being made of the metal or an alloy of the metal, but also a layer directly adjoining the functional layer, said layer being made of the metal, and at least one layer made of an alloy of the metal.