Component Structure Unit

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The invention relates to a structural unit for semiconductor devices, consisting of at least one semiconductor base material with at least one layer of material deposited on it. This layer has a non-uniform (inhomogeneous) thickness profile along the direction in which charge carriers move. By controlling the thickness variation of the layer, the distribution and concentration of charge carriers within the semiconductor device can be selectively tailored. Additional conductive layers (gates) may also be added for even finer control. The invention also proposes methods for manufacturing such structures, which can be used in components like transistors, including nanowire-based devices.

Use CasesContent extracted from patent full text and abstract with AI.

• Advanced field-effect transistors (FETs) and nanowire transistors for logic circuits
• Optoelectronic devices such as photodetectors or LEDs where precise charge control is needed
• Quantum computing elements that require spatially arranged charge carrier traps or regions
• Integrated circuits (ICs) using newly engineered channel regions for improved performance
• Customizable sensors for medical, environmental, or industrial applications requiring fine-tuned electronic properties
• Energy-efficient or high-reliability semiconductor devices for automotive or aerospace electronics

BenefitsContent extracted from patent full text and abstract with AI.

• Enables precise spatial control over charge carrier concentration and mobility within semiconductor components, improving device performance.
• Allows local tuning of electrical properties without changing the base semiconductor material, increasing design flexibility.
• Can reduce unwanted heat generation and enhance energy efficiency, thus increasing device lifetime and reliability.
• Supports complex device geometries and architectures, such as multi-gate or nanowire-based components, for next-generation electronics.
• The principle is applicable to a wide range of materials and device types, from traditional silicon to emerging 2D materials and polymers.

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The invention relates to a component structural unit for (semiconductor) components, comprising at least one semiconducting base material (2), which is characterized in that at least one material layer (3) is applied to the base material (2) such that said material layer forms an inhomogeneous thickness profile along the surface, in the transport direction of the charge carriers, in the component, by means of which the charge carrier concentration profile and the distribution of the charge carriers in a (semiconductor) component can be selectively influenced. Furthermore, a conductive material (4) can be arranged on the material layer (3) as a gate. The component structural unit can also have a plurality of independent gates. The base material (2) can be the channel of a FET and can be designed as a nanowire. The invention furthermore relates to a method for producing such a component structural unit for (semiconductor) components by means of which the charge carrier concentration profile and the distribution of the charge carriers in a (semiconductor) component can be selectively influenced. The invention furthermore relates to a semiconductor component containing at least one component structural unit according to the invention.