Method for Producing a Memory, Memory, and Use of the Memory

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This invention describes a method for manufacturing an electrochemical memory device. The process involves arranging two conductive tracks on a non-conductive substrate, with a porous dielectric containing redox-active molecules at their intersection, and then covering the assembly with a passivation layer. By applying voltage to the tracks, the redox reaction at the crossing point stores a bit of information.

Use CasesContent extracted from patent full text and abstract with AI.

• Non-volatile memory chips for computers and mobile devices
• Storage elements in advanced sensors or IoT devices
• On-chip memory for artificial intelligence accelerators
• Flexible or printed electronics for wearable devices
• Data storage in harsh or specialized environments where traditional memory may fail

BenefitsContent extracted from patent full text and abstract with AI.

• Enables miniature, high-density memory storage solutions
• Potentially lower power consumption compared to conventional memory
• Compatible with flexible and printed electronics manufacturing
• May offer improved durability and stability due to passivation
• Can be integrated with a variety of electronic substrates and devices

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Patent Abstract

The invention relates to a method for producing an electrochemical storage device, characterized by the steps: a) a non-conductive substrate is provided; b) a first conductor track made of conductive material is arranged on the substrate; c) a porous dielectric with redox-active molecules is arranged punctually on the first conductor track; d) a second conductor track is arranged orthogonally to the first conductor track, wherein at the crossing point the conductor tracks have an electrode function, between which the dielectric is arranged; e) a passivation layer is arranged on the substrate, the first conductor track, the dielectric and the second conductor track, wherein the first and the second conductor track at their crossing point with the dielectric arranged therebetween form a storage device in which by applying voltage across the conductor tracks the redox reaction of the redox-active molecules at the electrodes is driven to generate a bit. Various storage devices and their uses are disclosed.