RERAM Device and Method for Manufacturing a RERAM Device

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This invention describes a novel Resistive Random Access Memory (ReRAM) device structure featuring a 'fin'-shaped electrode embedded in a passivation structure that also connects to a counter electrode via a metal oxide element. The passivation structure acts as an effective barrier to block oxygen diffusion around the metal oxide element, ensuring stability and reliability. The patent also covers a detailed method for manufacturing such a ReRAM device, including techniques to scale the oxide switching volume to the nanometer range and encapsulate it, which improves memory cell consistency and reduces performance variability.

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• Non-volatile memory for computers and mobile devices, serving as next-generation storage solutions.
• Embedded memory in microcontrollers and systems-on-chip for IoT, automotive, and industrial applications.
• Neuromorphic computing hardware, where ReRAM cells act as artificial synapses for AI systems.
• Data centers and high-performance computing requiring fast and dense storage with low power loss.
• Wearable devices and edge computing systems that need energy-efficient, reliable memory.

BenefitsContent extracted from patent full text and abstract with AI.

• Significantly increased reliability and retention of memory state due to oxygen diffusion blocking.
• Scalability of the device down to nanometer dimensions, allowing ultra-dense memory arrays beyond the limits of traditional lithography.
• Low variability between memory cells, leading to more predictable and robust operation.
• Reduction of defects and degradation from oxygen-related processes, extending device lifetime.
• Manufacturing methods compatible with current semiconductor processes, supporting integration into existing production lines.

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Patent Abstract

The invention relates to a ReRAM device (1) having an electrode (4) which is embedded in a passivation structure (3) and is in the form of a fin which has a first metal and extends parallel to a plane of a substrate (2), a counter electrode (5) in the form of a layer which has a second metal and extends parallel to the plane of the substrate, and a metal oxide part (6) which has the first metal in oxidised form and which is located between the electrode and counter electrode, wherein the passivation structure (3) connects the electrode (4) to the counter electrode (5) and is arranged to block oxygen diffusion with respect to the metal oxide part (6). The invention also relates to a corresponding method for producing the ReRAM device.