Method for Manufacturing a Solar Cell and a Solar Cell

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention relates to a new type of thin-film silicon solar cell and its production method. The cell uses a unique n-doped layer composed of both a microcrystalline silicon phase and an amorphous silicon oxide phase, with a controlled oxygen content of 10 to 25%. This structure increases the light transparency and electrical performance of the cell. The design supports the option for both single-sided and double-sided illumination, enhancing its energy conversion efficiency compared to standard cells.

Use CasesContent extracted from patent full text and abstract with AI.

• Standard photovoltaic (PV) panels for rooftop solar installations
• Building-integrated photovoltaics (BIPV) where dual-sided illumination can be leveraged
• High-efficiency solar farms seeking improved cell performance
• Portable solar devices and charging applications
• Solar windows or transparent solar panels for architectural use
• Greenhouse or agrivoltaic solar panels that can harvest light from both top and bottom sides

BenefitsContent extracted from patent full text and abstract with AI.

• Higher energy conversion efficiency due to innovative dual-phase n-doped layer, reducing parasitic light absorption
• Capability for double-sided (bifacial) illumination, significantly boosting total light capture and electricity generation
• Improved transparency and light coupling, supporting novel solar panel designs such as transparent or semi-transparent panels
• Thin-film structure allows for lightweight, flexible, or integrable solar products
• Enhanced electrical properties may reduce the need for complex metal grids, simplifying manufacturing and reducing costs
• Potentially higher short-circuit current densities than conventional cells, improving the overall output per area

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Patent Abstract

The invention relates to a solar cell comprising a first electrical contact layer on a substrate and also a p-i-n structure on the first electrical contact layer, wherein the p-layer is arranged on the first electrical contact layer, and a second electrical contact layer on the n-layer of the p-i-n structure, wherein the i-layer of the p-i-n structure is microcrystalline, characterized by an n-doped layer having a total oxygen content of 10 to 25% and comprising two phases, a microcrystalline Si:H phase and an amorphous SiOx:H Phase. A method for producing the solar cell and the use of the solar cell are disclosed.