A Method for Determining Valley-Splitting in a Semiconductor Device

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This invention discloses a method for accurately determining valley splitting—a key quantum property—in semiconductor quantum devices, such as those using silicon. The method involves manipulating and measuring the quantum spin states of electrons confined in double quantum dots, using an external magnetic field. By analyzing the evolution and probabilistic behavior of these entangled spin states, the method can spatially map valley splitting across the semiconductor, which is crucial for quantum computing applications.

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• Characterization and quality control of silicon-based quantum computing chips during manufacturing.
• Optimization of semiconductor device fabrication processes to maximize valley splitting for stable qubit operation.
• Mapping valley splitting variations to design better qubit layouts and error correction strategies in quantum processors.
• Assessment and verification of the coherence properties of quantum dots for academic research and commercial quantum computers.
• Guidance for tuning external fields and gate voltages to optimize device operation in real-time quantum computing systems.

BenefitsContent extracted from patent full text and abstract with AI.

• Enables high-resolution, spatially-resolved measurement of valley splitting, crucial for reliable quantum bit (qubit) operation in silicon-based devices.
• Non-destructive testing and mapping of quantum properties across semiconductor wafers or chips.
• Improves fabrication process by providing actionable feedback on material quality and device structure.
• Supports development of more robust and scalable quantum processors.
• Allows for real-time adjustment and tuning of device parameters to maintain optimal quantum coherence.
• Helps avoid problematic device regions ('hot spots') by allowing trajectory planning around areas of poor valley splitting.

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Patent Abstract

A method of determining a valley splitting of a semiconductor device comprises setting a field strength of an external magnetic field B, for splitting entangled spin states associated with a double quantum dot generated in the semiconductor device; evolving the entangled spin states for an evolution period; measuring a state of the entangled spin states in a basis of the entangled spin states, the basis comprising at least two basis states; repeating the evolving and the measuring to determine a probability of the state of the entangled spin states being at least one of the at least two basis states; and assessing, based on the determined probability, the valley splitting.