Method For Depositing A Crystal Layer At Low Temperatures, In Particular A Photoluminescent IV-IV Layer On An IV Substrate, And An Optoelectronic Component Having Such A Layer

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This invention describes a method for depositing a single-crystal semiconductor layer at low temperatures onto a substrate. The method uses hydride and halide gases together with a carrier gas, creating reactive radicals that form the crystal layer when brought in contact with the substrate. The process is optimized to occur at temperatures lower than traditional methods, preventing unwanted reactions and improving layer quality. The invention also relates to optoelectronic components made using such a layer, which can have photoluminescent properties.

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• Manufacturing high-quality photoluminescent layers for LEDs and other light-emitting devices.
• Production of advanced sensors that require precise crystal layering on semiconductor substrates.
• Improvement of laser diodes by depositing better optoelectronic layers at lower temperatures.
• Enabling the fabrication of integrated circuits with specific crystal properties without damaging underlying structures.
• Development of solar cells with enhanced efficiency due to high-quality, low-temperature crystal growth.

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• Allows crystal layer deposition at lower temperatures, reducing thermal damage to sensitive substrates and layers.
• Improves energy efficiency and manufacturing scalability by minimizing decomposition reactions and unwanted by-products.
• Enhances the quality and uniformity of the crystal layers, leading to higher performance in optoelectronic devices.
• Enables integration of advanced functionalities (like photoluminescence) into semiconductor components.
• May expand the range of materials usable in device fabrication due to gentler processing conditions.

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Patent Abstract

A method for depositing a monocrystalline semiconductor layer consisting of a first element and a second element, wherein the first elements is fed as part of a hydride, and the second element is fed as part of a halide, together with a carrier gas, into a process chamber of a reactor, wherein radicals are produced from the hydride at a distance away from a surface of a semiconductor substrate, wherein at a temperature below a decomposition temperature of the radicals, at a total pressure of the gas in the process chamber sufficiently low to avoid a reverse reaction of the radicals in the gas phase the radicals and the halide are brought to the surface of the semiconductor substrate which is heated to a substrate temperature lower than the decomposition temperature, wherein heat released during a first exothermic chemical reaction drives a second endothermic chemical reaction.