Scanning Probe Microscope and Method for Measuring Local Electrical Potential Fields

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This invention describes a new type of scanning probe microscope and a measurement method for mapping local electrical potential fields at the nanometer scale. The key advancement is the attachment of a quantum dot to the microscope tip, which enables highly sensitive and high-resolution measurements of electric potential fields that are independent of the tip's distance from the sample or its radius. The method involves detecting the voltage at which the quantum dot changes its charge, allowing the selective and exclusive measurement of local electric potentials, unaffected by other forces such as van der Waals interactions.

Use CasesContent extracted from patent full text and abstract with AI.

• Nanoscale mapping of electric potential fields in material science research.
• High-resolution characterization of nanostructures and electronic devices.
• Non-contact, high-precision measurements on both conductive and insulating surfaces.
• Quality assurance and diagnostics in semiconductor manufacturing.
• Reading data from charge-based nanoscale memory elements without altering them.
• Advanced topographical and potential field imaging of biological, organic, or molecular samples.
• Fundamental studies in surface physics and electrostatics at the atomic or molecular scale.

BenefitsContent extracted from patent full text and abstract with AI.

• Ultra-high spatial resolution (down to 0.5 nm) and sensitivity for electric potential mapping.
• Measurement accuracy is independent of probe tip geometry (radius or distance to sample).
• Exclusive measurement of electrical potential fields, free from interference by other forces (like van der Waals).
• Capability for three-dimensional potential mapping, not limited to just surface planes.
• Applicability to both conductive and insulating samples—broadening its use in diverse fields.
• Non-contact, low-impact measurement reduces risk of sample damage or undesired modification.
• Contactless readout of nanoscale memory avoids data corruption or accidental writing during measurement.

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Patent Abstract

The invention relates to a scanning probe microscope and a method for measuring local electrical potential fields. According to the invention, a scanning probe microscope is provided, on the tip of which a quantum dot is applied. This permits an increase in the resolution and sensitivity in the measuring of electrical potential fields. In the method according to the invention the applied voltage is determined, wherein a charge change of the quantum dot occurs. According to the invention, the resolution is no longer dependent on the distance of the tip from the sample to be investigated, nor on the radius if the tip.