Plasma spray method

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This patent describes a plasma spray method for producing metal or silicon-based nanopowders and thin films. The method involves introducing a metal or silicon oxide material into a plasma jet at low pressure (≤1000 Pa), where it is vaporized and reduced (oxygen removed). The resulting pure metal or related compounds (such as nitrides or carbides) can be collected as nanometer-scale powders or deposited as thin coatings on substrates.

Use CasesContent extracted from patent full text and abstract with AI.

• Production of high-purity metal, nitride, or carbide nanopowders for electronics, catalysis, or additive manufacturing
• Deposition of specialized thin films and coatings on industrial components, e.g., turbine blades, to enhance properties such as wear resistance or oxidation protection
• Manufacturing of porous or dense nanostructured coatings for sensors, filtration systems, or biomedical implants
• Fabricating advanced ceramic or metal-matrix composite materials
• Creating customized surface properties for engineering components in aerospace, energy, or automotive industries

BenefitsContent extracted from patent full text and abstract with AI.

• Enables cost-effective and scalable production of metal, nitride, or carbide nanoparticles from inexpensive and safe oxide powders
• Allows precise control of particle or coating characteristics (such as grain size, porosity, and layer thickness) through process parameters
• Facilitates creation of coatings and powders that are difficult or impossible to produce using conventional methods, e.g., non-meltable nitrides or carbides
• Reduces the need for hazardous precursor chemicals typically required in conventional nanopowder synthesis
• Supports large-scale production while maintaining high material purity and uniformity

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The method involves introducing starting material into a plasma jet generated by a plasma generator (112) at a process pressure of 1000Pa in a process chamber. The starting material is composed of a metal or silicon oxide which is vaporized in the plasma jet. The metal or silicon is deposited in the form of nanopowder or of a film (124), after oxygen reduction process.