Method for Hydrogen Passivation of Semiconductor Layers

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This patent describes a new method for hydrogen passivation of semiconductor layers, particularly silicon-based layers, using a light arc plasma source. The process generates atomic hydrogen via an arc plasma, which then neutralizes defects ('dangling bonds') in the semiconductor without damaging the material and can be performed cost-effectively under atmospheric pressure, even in continuous production.

Use CasesContent extracted from patent full text and abstract with AI.

• Manufacture of high-efficiency solar cells by improving the electrical properties of semiconductor layers.
• Production of high-performance electronic and optoelectronic devices such as transistors, LEDs, or sensors.
• Passivation step in the fabrication of thin-film semiconductor devices to enhance their durability and performance.
• Integration into continuous (roll-to-roll) manufacturing lines for large-scale semiconductor processing.
• Post-treatment of silicon wafers and films in microelectronics or photovoltaics to reduce recombination losses.

BenefitsContent extracted from patent full text and abstract with AI.

• Minimizes or prevents damage to semiconductor layers during passivation, yielding high-quality end-products.
• Allows for atmospheric pressure operation, reducing equipment complexity and operational costs compared to high-vacuum methods.
• Enables continuous processing, supporting high-throughput, cost-effective manufacturing (suitable for roll-to-roll lines).
• Effective at passivating a variety of semiconductor materials, notably silicon and silicon alloys.
• Improves device performance by reducing electrical defects and enhancing charge transport properties.
• Safer operation by employing diluted hydrogen/inert gas mixtures rather than pure hydrogen, reducing explosion risk.
• Flexibility in treating multiple or stacked semiconductor layers of varying thicknesses in a single process.

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Patent Abstract

The present invention relates to a method for the hydrogen passivation of semiconductor layers, wherein the passivation is effected by using an arc plasma source, to the passivated semiconductor layers produced according to the method, and to the use thereof.