Method for Gentle Post-Doping of Undoped Passivation Layers

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This patent describes a gentle method for post-doping undoped passivation layers, particularly on silicon heterojunction (SHJ) solar cells. The process involves preparing a silicon substrate, applying an intrinsic amorphous silicon passivation layer, and then introducing dopants in a controlled, localized way by decomposing doping agents and applying energy to generate desired ionic modifications, making the process gentle and mechanically non-invasive.

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• Manufacturing of high-efficiency SHJ solar cells
• Enhancement of semiconductor device reliability
• Production of advanced electronics requiring delicate passivation
• Improvements in thin-film device fabrication processes
• Post-processing upgrades for pre-existing undoped passivation layers

BenefitsContent extracted from patent full text and abstract with AI.

• Reduces damage to sensitive passivation layers during doping
• Allows localized and independent control of doping and energy application
• Enhances the efficiency and longevity of solar cells
• Improves manufacturing yield due to reduced layer degradation
• Compatible with existing semiconductor processing workflows

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Inventors & Applicants

Patent Abstract

The invention relates to a method for post-doping of intrinsically passivated layers of components, semiconductor components, in particular for gentle post-doping of undoped passivation layers of SHJ solar cells, comprising the following process steps: a) providing a substrate layer comprising a c-Si substrate layer b) cleaning the layer from step a) c) deposition of a hydrogenated intrinsic amorphous silicon layer ((i) a-Si:H) as a passivation layer on both sides of the c-Si substrate layer d) post-doping of the (i) a-Si:H layer by decomposition of dopants on the front side and on the rear side of the (i) a-Si:H layer e) introduction of energy for the ions impinging on the passivation layer, wherein the process steps of the decomposition of the dopants according to process step d) and the energy input for the ions according to process step e) are carried out independently of one another and locally separated from one another.