A method of applying a pattern of metal, metal oxide and/or semiconductor material on a substrate

Publication: EP1840648A1
Published: 2007-10-03
Family Size: 8
Granted: Yes (3/8)

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes a versatile method for forming highly precise patterns of metals, metal oxides, or semiconductor materials onto various substrates, using a transfer process that can achieve nanoscale resolutions (≤ 10 nm). The technique generally involves creating a pattern on an initial substrate, optionally using lithography and/or lubricant or transfer-mediating layers to control adhesion, and then transferring the pattern to a target substrate (which may be flexible or multi-layered), with minimal surface roughness and smooth edges.

Use CasesContent extracted from patent full text and abstract with AI.

  • Fabrication of advanced electronic circuits (including nanoscale interconnects/devices)
  • Production of organic light-emitting diodes (OLEDs), field effect transistors (OFETs), and molecular electronic devices
  • Manufacture of biosensors and biomedical chips requiring precise patterning at the nanoscale
  • Creation of flexible electronic devices by transferring patterns onto polymeric substrates
  • Patterning of semiconductor, metal, or oxide layers in photovoltaics or optoelectronics
  • Preparation of nanostructured surfaces for research or advanced material science applications

BenefitsContent extracted from patent full text and abstract with AI.

  • Enables extremely high-resolution patterning (down to ≤ 10 nm), exceeding conventional soft lithography methods
  • Compatible with a wide range of materials (various metals, oxides, semiconductors) and substrates (rigid, flexible, organic, inorganic)
  • Produces patterns with very low surface roughness (≤ 2 nm) and smooth, well-defined edges
  • Can be performed under ambient conditions—simplifying the manufacturing process and reducing costs
  • Minimizes introduction of defects such as atomic diffusion, preserving the integrity of organic and functional layers
  • Adaptable to several lithographic techniques and scalable for industrial production
  • Non-destructive transfer process preserves molecular and electronic properties between layers

Technical Classifications (CPCs)

Main Classifications

Manufacturing & Transport

Physics & Measurement

Sub Classifications

Nanotechnology

Photography & Cinematography

CPC Codes

B82Y10/00B82Y40/00G03F7/0002

Inventors & Applicants

Applicants

Sony Deutschland Gmbh

Forschungszentrum Juelich Gmbh

Patent Abstract

The present application relates to a method of applying a pattern of metal, metal oxide and/or semiconductor material on a substrate, to a pattern created by such method and to uses of such pattern.

Key Information

Publication No.

EP1840648A1

Family ID

37075988

Publication Date

2007-10-03

Application No.

EP06006899A

Application Date

2006-03-31

Priority Date

2006-03-31

Granted

Yes (3/8)

Possible Cooperation

For further information please contact the transfer office.