A method of applying a pattern of metal, metal oxide and/or semiconductor material on a substrate
Simple SummaryContent extracted from patent full text and abstract with AI.
This patent describes a versatile method for forming highly precise patterns of metals, metal oxides, or semiconductor materials onto various substrates, using a transfer process that can achieve nanoscale resolutions (≤ 10 nm). The technique generally involves creating a pattern on an initial substrate, optionally using lithography and/or lubricant or transfer-mediating layers to control adhesion, and then transferring the pattern to a target substrate (which may be flexible or multi-layered), with minimal surface roughness and smooth edges.
Use CasesContent extracted from patent full text and abstract with AI.
- Fabrication of advanced electronic circuits (including nanoscale interconnects/devices)
- Production of organic light-emitting diodes (OLEDs), field effect transistors (OFETs), and molecular electronic devices
- Manufacture of biosensors and biomedical chips requiring precise patterning at the nanoscale
- Creation of flexible electronic devices by transferring patterns onto polymeric substrates
- Patterning of semiconductor, metal, or oxide layers in photovoltaics or optoelectronics
- Preparation of nanostructured surfaces for research or advanced material science applications
BenefitsContent extracted from patent full text and abstract with AI.
- Enables extremely high-resolution patterning (down to ≤ 10 nm), exceeding conventional soft lithography methods
- Compatible with a wide range of materials (various metals, oxides, semiconductors) and substrates (rigid, flexible, organic, inorganic)
- Produces patterns with very low surface roughness (≤ 2 nm) and smooth, well-defined edges
- Can be performed under ambient conditions—simplifying the manufacturing process and reducing costs
- Minimizes introduction of defects such as atomic diffusion, preserving the integrity of organic and functional layers
- Adaptable to several lithographic techniques and scalable for industrial production
- Non-destructive transfer process preserves molecular and electronic properties between layers
Technical Classifications (CPCs)
Main Classifications
Manufacturing & Transport
Physics & Measurement
Sub Classifications
Nanotechnology
Photography & Cinematography
CPC Codes
Inventors & Applicants
Inventors
Applicants
Sony Deutschland Gmbh
Forschungszentrum Juelich Gmbh
Patent Abstract
The present application relates to a method of applying a pattern of metal, metal oxide and/or semiconductor material on a substrate, to a pattern created by such method and to uses of such pattern.
Key Information
Publication No.
EP1840648A1
Family ID
37075988
Publication Date
2007-10-03
Application No.
EP06006899A
Application Date
2006-03-31
Priority Date
2006-03-31
Granted
Yes (3/8)
Possible Cooperation
For further information please contact the transfer office.