Silicon Thin Films Produced by CVD Using Liquid Silanes with Adjustable Carbon Content

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention describes a method to produce silicon thin films by using chemical vapor deposition (CVD) with liquid silanes, specifically trisilane dissolved in an organic solvent. The process enables precise control over the carbon content in the resulting silicon thin layer by adjusting the ratio of trisilane to the organic solvent. Silicon is deposited onto a substrate surface by evaporating the prepared solution, allowing for the production of amorphous silicon thin films with tunable properties, all at atmospheric pressure and without complex vacuum or plasma systems.

Use CasesContent extracted from patent full text and abstract with AI.

• Manufacturing of solar cells requiring silicon thin films with specific properties.
• Production of semiconductor devices such as diodes, transistors, thyristors, and rectifiers.
• Fabrication of optoelectronic devices like LEDs and photodetectors.
• Development of advanced sensor technologies using tailored silicon layers.
• Creation of microelectronic components where precise thin film properties are necessary.

BenefitsContent extracted from patent full text and abstract with AI.

• Precise adjustment of carbon content in silicon thin films, enabling tailored electrical and physical properties.
• More cost-effective and simpler process compared to conventional methods, as it avoids expensive vacuum or plasma equipment.
• Production can take place at atmospheric pressure, simplifying the apparatus and scaling possibilities.
• Ability to produce homogeneous, high-quality amorphous silicon layers with controlled hydrogen incorporation.
• Reduces unwanted silicon deposition on equipment surfaces, increasing material efficiency and process yield.

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The invention relates to a method for producing a silicon-containing layer, the method being characterized by the method steps of providing a solution, which contains trisilane and at least one organic solvent; and evaporating the solution and depositing silicon on a substrate surface.