Method for the Production of Silicon Layers

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The invention describes a liquid-phase process for rapidly producing high-purity silicon layers on various substrates. This is accomplished by applying a higher silane (made from hydridosilanes with the formula SiaH2a+2, a = 3-10) onto a substrate and then converting it into a silicon layer through a quick thermal treatment at 500–900°C for 5 minutes or less. The method improves the stability of precursor formulations, enhances substrate wetting, and results in homogeneous silicon layers with superior electrical and optical properties.

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• Production of thin-film silicon layers for use in photovoltaic solar cells
• Fabrication of silicon-based electronic components such as transistors and photodiodes
• Manufacturing of optoelectronic devices using high-quality amorphous or polycrystalline silicon films
• Large-area silicon coating applications on glass, metal, plastics, or flexible substrates
• Printable electronics where liquid-phase silicon precursors enable pattern formation via various printing or coating techniques

BenefitsContent extracted from patent full text and abstract with AI.

• Significantly reduced thermal processing time (≤ 5 minutes) compared to conventional methods
• Enables production of high-purity, homogeneous silicon layers with improved electrical and optical characteristics
• Allows use of stable, versatile precursor formulations suitable for various substrates and coating techniques
• Facilitates low-cost, scalable manufacturing with compatibility for roll-to-roll and large-area processing
• Potential to tailor layer properties (e.g., doping, thickness) for specific electronic or optoelectronic applications
• Offers flexibility in substrate choice, including heat-sensitive materials like certain plastics and foils

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The invention relates to a liquid-phase method for the thermal production of silicon layers on a substrate, wherein at least one higher silicon that can be produced from at least one hydridosilane of the generic formula SiaH2a+2 (with a = 3 - 10) being applied to a substrate and then being thermally converted to a layer that substantially consists of silicon, the thermal conversion of the higher silane proceeding at a temperature of 500 - 900 °C and a conversion time of = 5 minutes. The invention also relates to silicon layers producible according to said method and to their use.