METHOD FOR APPLYING A Zn(S, O) BUFFER LAYER TO A SEMICONDUCTOR SUBSTRATE BY CHEMICAL BATH DEPOSITION

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention describes a modified chemical bath deposition (CBD) method for applying a zinc oxysulfide (Zn(S, O)) buffer layer to semiconductor substrates, particularly for thin-film solar cells. By adding hydrogen peroxide (H2O2) as an additive in low concentrations (up to 5%), the deposition rate of the Zn(S, O) buffer layer is significantly increased, while maintaining homogeneous composition and performance.

Use CasesContent extracted from patent full text and abstract with AI.

• Fabrication of thin-film solar cells, including copper-indium-gallium-selenide (CIGS) and similar technologies
• Manufacture of environmentally friendly photovoltaic modules using non-toxic buffer layers
• Production of flexible solar panels on metal or plastic substrates
• Integration in large-scale solar cell manufacturing facilities to increase throughput
• Deposition of protective or functional buffer layers in other semiconductor device processes

BenefitsContent extracted from patent full text and abstract with AI.

• Faster deposition process for Zn(S, O) buffer layers, increasing production efficiency
• Provides a homogeneous and high-quality buffer layer beneficial for device performance
• Enables non-toxic alternatives to traditional cadmium-based buffer layers, improving environmental safety
• Suitable for large-area substrates and scalable for industrial manufacturing
• Maintains or matches the solar cell efficiency achieved with conventional methods
• The process is simple and cost-effective compared to high-vacuum or sputtering techniques

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

In order to increase the deposition speed of a Zn(S, O) buffer layer by way of a modified CBD method, hydrogen peroxide in a concentration of up to 5% is added as an additive.