Amorphous/crystalline Silicon Hetero Solar Cell

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This invention relates to a silicon solar cell that combines an amorphous silicon emitter layer with a crystalline silicon absorber layer to enhance overall efficiency. By specifically controlling the defect density, Urbach energy, and Fermi level position of the amorphous silicon layer, the solar cell achieves reduced losses and improved power conversion performance compared to conventional designs. The cell structure also incorporates additional thin layers and surface texturing to further improve operation and protection.

Use CasesContent extracted from patent full text and abstract with AI.

• Residential and commercial solar panels for electricity generation
• Integration into solar farms and large-scale renewable energy plants
• Building-integrated photovoltaics (BIPV) such as solar windows or facades
• Portable and off-grid solar-powered devices
• Electric vehicle-mounted solar charging systems

BenefitsContent extracted from patent full text and abstract with AI.

• Higher efficiency compared to standard amorphous/crystalline heterojunction silicon solar cells
• Reduced defect density in the amorphous emitter leads to lower energy losses
• Optimized interface and band structure improves charge separation and collection
• Enhanced durability and protection from environmental effects
• Potential for thinner, lighter, and more flexible solar panels

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The intention is to specify an amorphous/crystalline Si hetero solar cell whose parameters ensure that the efficiency is improved. According to the prior art, such a solar cell has at least: a crystalline Si absorber layer of one conduction type, arranged on one side of which is an amorphous Si emitter layer of the opposite conduction type and thereon a TCO layer and a front contact, and arranged on the other side of which is a rear contact. According to the invention, then, the amorphous Si emitter layer has a low defect density n(E) of less than 1019 cm-3 and is characterized by an Urbach energy of less than 90 meV and the Fermi level (EF) is near the valence (EV)- or conduction band edge (EC) of the amorphous Si emitter layer.