Photolithographic method for depicting a three-dimensional structure

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This patent describes an advanced photolithographic method for forming complex three-dimensional microstructures in a photoresist layer. By applying adjustable electric fields perpendicular to the direction of light exposure, the movement of charge carriers generated during exposure can be precisely controlled. This technique enables the fabrication of intricate, high-resolution 3D structures with sloped, rounded, or curved profiles, which are not easily achievable with traditional lithography methods.

Use CasesContent extracted from patent full text and abstract with AI.

• Manufacturing of micro-scale mechanical components with optimized shapes for MEMS (Micro-Electro-Mechanical Systems).
• Production of complex microfluidic channels and devices for lab-on-a-chip technologies.
• Fabrication of advanced optical elements, such as micro-lenses or diffractive devices, requiring precise 3D shaping.
• Biomedical device manufacturing, including implants, sensors, or scaffolds with tailored geometries.
• Creation of 3D micro- or nanostructures in semiconductor technology, such as for transistors or interconnects requiring unconventional profiles.

BenefitsContent extracted from patent full text and abstract with AI.

• Enables creation of truly three-dimensional and complex microstructures, including convex, concave, and curved surfaces.
• Highly reproducible and precise structure formation due to controlled electric field manipulation.
• Reduces process complexity and manufacturing cost by allowing complex forms in a single lithographic step, rather than multiple processing stages.
• Compatible with standard photoresists (such as SU-8) and common UV lithography equipment.
• Expands the design possibilities for microdevices, potentially leading to improved mechanical, optical, and fluidic performance.

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Patent Abstract

The photolithographic method involves providing a photoresist layer from a chemically amplified photoresist with a photo-acid generator for generating free charge carriers. The oriented migration of the free charge carriers is stimulated in the photoresist layer perpendicular to the illumination direction (22).