Photoelectrode with a Protective Layer

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This invention is a photoelectrode designed for photoelectrocatalytic processes, featuring a special protective layer that is water-resistant and transparent to visible light. The protection layer is made from materials such as SiNx, SiOx, SiCx, or Al2O3, and contains nanometer-scale holes filled with a catalyst. This layer is positioned on the light-facing side of a photoactive semiconductor layer, enhancing durability and performance in applications involving light-driven chemical reactions.

Use CasesContent extracted from patent full text and abstract with AI.

• Solar water splitting to produce hydrogen using sunlight.
• Photoelectrocatalytic reduction of carbon dioxide for sustainable fuel production.
• Corrosion-resistant electrodes for use in harsh liquid-based photoelectrochemical cells.
• Development of efficient and long-lived photoelectrochemical devices for environmental remediation.

BenefitsContent extracted from patent full text and abstract with AI.

• Enhanced durability of the photoelectrode in aqueous environments due to the water-resistant protective layer.
• Improved efficiency in photoelectrocatalytic reactions because of better light transmission and effective catalysis.
• Protection of sensitive semiconductor materials from corrosion or degradation.
• Allows for extended device lifespan and higher operational stability in real-world applications.
• Facilitates efficient charge transfer and catalytic activity through the catalyst-filled nanoholes.

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Patent Abstract

Photoelektrode für photoelektrokatalytische Verfahren mit einer Schutzschicht und mindestens einer photoaktiven Halbleiterschicht, wobei die Schutzschicht mindestens wasserbeständig und für sichtbares Licht transparent ist und auf der lichteinfallenden Seite der photoaktiven Halbleiterschicht angeordnet ist, dadurch gekennzeichnet, dass die Schutzschicht aus SiNx oder SiOx oder SiCx oder Al2O3 gebildet und Löcher mit einem Durchmesser im nm-Bereich aufweist, die mit einem Katalysator gefüllt sind.