Chalcopyrite thin layer solar cell for use in thin layer photovoltaic industry, has copper indium selenide absorber layer, where sulfur and oxygen ratio and dopant-concentration decrease starting from absorber layer to window layer
Simple SummaryContent extracted from patent full text and abstract with AI.
This patent describes a chalcopyrite-based thin-film solar cell, where the structure is optimized by having specific materials and concentration gradients. The solar cell uses a copper indium selenide (CIS) absorber layer, a buffer layer made from zinc sulfide and zinc oxide with selected dopants, and a zinc-oxide window layer. The ratio of sulfur and oxygen, as well as the dopant concentration, gradually decreases from the absorber layer to the window layer, enhancing the cell's performance.
Use CasesContent extracted from patent full text and abstract with AI.
- Thin-film solar panels for residential or commercial rooftops
- Large-scale photovoltaic farms for green energy production
- Solar panels integrated into electronic devices or vehicles
- Solar-powered standalone systems in remote areas
BenefitsContent extracted from patent full text and abstract with AI.
- Improved energy conversion efficiency due to optimized material gradients
- Potentially lower manufacturing costs with thin-film technology
- Reduced use of toxic materials compared to traditional designs
- Enhanced stability and longer lifespan of the solar cell
- Adaptability for flexible or lightweight solar panel applications
Technical Classifications (CPCs)
Main Classifications
Electrical & Electronic Tech
Sub Classifications
Semiconductor & Solid-State Devices
CPC Codes
Inventors & Applicants
Inventors
Applicants
Helmholtz Zent B Mat & Energ
Soltecture Gmbh
Patent Abstract
The cell has a buffer layer (40) directly applied on a copper indium selenide (CIS) absorber layer (14). A zinc-oxide containing window layer (20) is directly applied on the buffer layer. The buffer layer is made of zinc sulfide and zinc oxide. The buffer layer includes dopants selected from a group of cadmium, magnesium, sodium and calcium. A sulfur and oxygen ratio and a dopant-concentration decrease starting from the absorber layer to the window layer. An interdiffusion layer is provided between the buffer layer and the absorber layer. An independent claim is also included for a method for manufacturing a chalcopyrite thin layer solar cell.
Key Information
Publication No.
DE102012204676A1
Family ID
49112247
Publication Date
2013-09-26
Application No.
DE102012204676A
Application Date
2012-03-23
Priority Date
2012-03-23
Granted
Yes (1/2)
Possible Cooperation
For further information please contact the transfer office.