Chalcopyrite thin layer solar cell for use in thin layer photovoltaic industry, has copper indium selenide absorber layer, where sulfur and oxygen ratio and dopant-concentration decrease starting from absorber layer to window layer

Publication: DE102012204676A1
Published: 2013-09-26
Family Size: 2
Granted: Yes (1/2)

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes a chalcopyrite-based thin-film solar cell, where the structure is optimized by having specific materials and concentration gradients. The solar cell uses a copper indium selenide (CIS) absorber layer, a buffer layer made from zinc sulfide and zinc oxide with selected dopants, and a zinc-oxide window layer. The ratio of sulfur and oxygen, as well as the dopant concentration, gradually decreases from the absorber layer to the window layer, enhancing the cell's performance.

Use CasesContent extracted from patent full text and abstract with AI.

  • Thin-film solar panels for residential or commercial rooftops
  • Large-scale photovoltaic farms for green energy production
  • Solar panels integrated into electronic devices or vehicles
  • Solar-powered standalone systems in remote areas

BenefitsContent extracted from patent full text and abstract with AI.

  • Improved energy conversion efficiency due to optimized material gradients
  • Potentially lower manufacturing costs with thin-film technology
  • Reduced use of toxic materials compared to traditional designs
  • Enhanced stability and longer lifespan of the solar cell
  • Adaptability for flexible or lightweight solar panel applications

Technical Classifications (CPCs)

Main Classifications

Electrical & Electronic Tech

Sub Classifications

Semiconductor & Solid-State Devices

CPC Codes

H10F10/167H10F71/00

Inventors & Applicants

Applicants

Helmholtz Zent B Mat & Energ

Soltecture Gmbh

Patent Abstract

The cell has a buffer layer (40) directly applied on a copper indium selenide (CIS) absorber layer (14). A zinc-oxide containing window layer (20) is directly applied on the buffer layer. The buffer layer is made of zinc sulfide and zinc oxide. The buffer layer includes dopants selected from a group of cadmium, magnesium, sodium and calcium. A sulfur and oxygen ratio and a dopant-concentration decrease starting from the absorber layer to the window layer. An interdiffusion layer is provided between the buffer layer and the absorber layer. An independent claim is also included for a method for manufacturing a chalcopyrite thin layer solar cell.

Key Information

Publication No.

DE102012204676A1

Family ID

49112247

Publication Date

2013-09-26

Application No.

DE102012204676A

Application Date

2012-03-23

Priority Date

2012-03-23

Granted

Yes (1/2)

Possible Cooperation

For further information please contact the transfer office.