Sensor assembly for characterization of plasma coating, plasma etching and plasma treatment processes and method for determining characteristic parameters in these processes

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This invention describes a compact, integrated sensor assembly designed to monitor and characterize plasma coating, etching, and treatment processes in real time. The sensor combines a quartz crystal microbalance (QCM) with a planar Langmuir probe and a pyrometric sensor, all housed together. The system enables simultaneous measurement of film thickness, deposition/etch rate, plasma density, electron temperature, and total energy input into the process. Data is collected and analyzed by a connected computer, allowing for faster and more precise control and analysis of plasma processes.

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• Quality control and monitoring in semiconductor manufacturing during plasma etching and coating processes
• Process optimization in the production of thin films for microelectronics, photovoltaic cells, and optical devices
• Research and development of new plasma deposition or etching techniques
• Ensuring uniform plasma processing in large-scale industrial applications such as architectural glass coating or hard coating of tools
• Feedback-controlled plasma system regulation to improve yield and reduce defects in manufacturing

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• Enables simultaneous, real-time measurement of multiple key process parameters (thickness, rate, plasma properties, energy input) with millisecond time resolution
• Combines multiple measurement techniques (QCM, Langmuir probe, pyrometry) into one compact, movable sensor assembly, reducing complexity and space requirements compared to separate instruments
• Allows for faster and more accurate characterization and control of plasma processes, which improves production efficiency and reduces the likelihood of defects
• Facilitates automation and advanced process control through computer-based data analysis and feedback
• Improves reproducibility and reliability in plasma-based manufacturing processes by providing comprehensive, quantitative process characterization

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Patent Abstract

Sensor arrangement for characterizing plasma coating- and plasma etching in a plasma system, comprises: at least one quartz crystal (1) with a front electrode (2) and a back electrode (3), where the front electrode of the quartz crystal exposed to the plasma etching or plasma coating, is insulated against the housing (5) of the arrangement and is formed as a planar Langmuir probe; a pyrometric sensor (4) for measuring the average temperature of the back electrode; and a pivotable screening diaphragm arranged outside the sensor housing between the opening and plasma source in the plasma unit. Sensor arrangement for characterizing plasma coating- and plasma etching in a plasma system, comprises: at least one quartz crystal (1) with a front electrode (2) and a back electrode (3), where the front electrode of the quartz crystal exposed to the plasma etching or plasma coating, is insulated against the housing (5) of the arrangement and is formed as a planar Langmuir probe, and is connected with a current-voltage characteristic curve measuring device arranged outside the plasma system, for measuring the Langmuir characteristic curve; a pyrometric sensor (4) arranged with respect to the back electrode, for measuring the average temperature of the back electrode, and the quartz crystal with its front electrode formed as planar Langmuir probe and the pyrometric sensor, forms a combination sensor, which is arranged in sensor housing, and which has an opening lying opposite to the front electrode; and a pivotable screening diaphragm arranged outside the sensor housing between the opening and plasma source in the plasma unit. The combination sensor is movable, and has measurement- and evaluation units, which are connected to a computer for data acquisition, -analysis and -display. The quartz crystal with a measuring unit for determining frequency of quartz crystal and the planar Langmuir probe is connected with a measuring unit for measuring its current-voltage characteristic curve, and the pyrometric sensor is connected with a measuring amplifier. The computer determines the deposition- or etching rate, and the plasma density, the electron temperature and the total energy input of the plasma processes, using a measurement program from the measured quantities. An independent claim is also included for determining the characteristics of the plasma coating and plasma etching in a plasma system, for producing thin layers, comprising (i) simultaneously measuring (a) the resonant frequency of the quartz crystal, (b) the I-U characteristic curve of a planar Langmuir probe, and (c) the mean temperature of the rear electrode at a position of the sensor combination in the plasma chamber with a time resolution of milliseconds to seconds, (ii) transmitting the measured data to the computer for data acquisition, -analysis and -display, and (iii) determining the parameters of the plasma coating or plasma etching, such as layer thickness or deposition- or etch rate, plasma density, electron temperature and energy influx from the transmitted data by means of the computer program, where the geometrical dimensions of quartz crystal and Langmuir probe are considered during the determination of layer thickness, or deposition- or etch rate, plasma density and electron temperature and an energy influx calibration factor is considered during the determination of total energy influx.