Method for Wet Chemical Etching of TiO2 Thin Films and TiO2 Particles and Etchant

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This invention provides a method and a specific etching solution for the wet-chemical etching of titanium dioxide (TiO2) thin films and particles. The method enables precise removal of TiO2 coatings and reduction in particle size by using a strong alkaline solution (such as NH4OH, NaOH, or KOH) combined with hydrogen peroxide (H2O2) at a pH greater than 13. The process is controlled and reproducible, allowing for defined material removal rates.

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• Manufacturing and patterning of TiO2 thin films for electronic or optoelectronic devices (e.g., sensors, solar cells, capacitors)
• Preparation of TiO2 surfaces for subsequent functionalization in biomedical devices
• Controlled reduction of TiO2 particle size for use in nanotechnology or catalysis
• Recycling or reworking of TiO2-coated glass substrates or optoelectronic components
• Fabrication of micro- and nanoscale TiO2 structures for research or commercial applications

BenefitsContent extracted from patent full text and abstract with AI.

• Enables controlled and reproducible removal of TiO2 layers, improving process reliability
• Does not require toxic etchants (e.g., hydrofluoric acid), resulting in safer handling and waste disposal
• Suitable for both thin films and particulate TiO2, enhancing versatility
• Leaves minimal hazardous byproducts, improving environmental safety
• Can be tuned by adjusting reagent concentration and temperature to meet different etching needs
• Facilitates advanced manufacturing of high-precision TiO2-based components and devices

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Patent Abstract

The invention relates to a method and an etching reagent for the wet-chemical etching of TiO2 thin-films and TiO2particles that permits a defined removal of the TiO2thin-film and a reduction of the particle size. The method comprises the steps: production of an etching reagent with a pH value greater than 13, said reagent containing a base with a concentration of > 0.1 mol, selected from the bases NH4OH, NaOH, KOH or mixtures of the same and H2O2 with a smaller concentration than that of the base; setting of a temperature that is equal to or greater than the ambient temperature; immersion of the TiO2 thin-films and TiO2 particles in the etching reagent and steeping of the layers and particles in accordance with the temperature and composition of the etching reagent; removal of the etched TiO2 thin-films and particles, said films and particles are then rinsed with distilled water and dried. To maintain the initial composition of the etching reagent, H2O2 is added during the etching process.