Metal Chalcogenide Thin Layer Electrode, Method for Production Thereof and Use Thereof

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This patent describes a novel method for producing metal chalcogenide thin-film electrodes using a process that involves reacting a metal or metal oxide with a halogen in a non-aqueous solvent, electrochemically depositing the metal onto a conductive substrate, and then exposing the substrate to a chalcogen element to form the metal chalcogenide layer. The resulting electrodes are particularly suitable as anodes for oxygen evolution in (photo)electrochemical water splitting, providing improved efficiency and stability, and can use inexpensive starting materials such as industrial or recycled metals.

Use CasesContent extracted from patent full text and abstract with AI.

• Anodes in electrolyzers for hydrogen production via water splitting.
• Photoanodes in solar-driven (photoelectrochemical) water splitting systems for sustainable hydrogen generation.
• Electrode materials in fuel cells or metal-air batteries requiring durable, catalytically active surfaces.
• Thin-film deposition in fabrication of nanostructured catalysts for chemical synthesis or sensors.
• Corrosion protection layers on semiconductor substrates in harsh electrochemical environments.

BenefitsContent extracted from patent full text and abstract with AI.

• Enables the use of low-cost and potentially recycled metals as starting materials, reducing production costs.
• Produces stable and compact metal chalcogenide films with nanostructured morphology, improving electrode lifetime and efficiency.
• Can be adapted to form oxides, sulfides, or selenides using readily available chalcogens (O, S, Se).
• Carbon-containing layers formed during the process enhance the stability, mechanical integrity, and conductivity of the thin film.
• Operates in non-aqueous, low-water conditions, minimizing unwanted side reactions and enabling high-purity film formation.
• Improves the performance of (photo)electrochemical water splitting, addressing a key bottleneck in sustainable hydrogen production.

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Patent Abstract

The invention relates to a method for producing a metal chalcogenide thin layer electrode, comprising the steps: (a) bringing a metal or metal oxide into contact with an elementary halogen in a non-aqueous solvent, generating a metal halogenide bond in the solution, (b) connecting a negative electrical voltage to an electrically conductive or semiconductive substrate which is in contact to the solution from step (a), and (c) during and/or after step (b), bringing the substrate into contact with an elementary chalcogen, forming a metal chalcogenide layer on the substrate. The invention furthermore relates to a metal chalcogenide thin layer electrode which can be produced by the method and use thereof as an anode for oxygen release in (photo)electrochemical water-splitting.