Atmospheric Pressure Chemical Vapor Deposition Method for Producing a N-Semiconductive Metal Sulfide Thin Layer

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This patent describes a method for depositing N-type semiconductive metal sulfide thin films, particularly indium sulfide (In2S3), onto a heated substrate using atmospheric pressure chemical vapor deposition (APCVD). The process involves carefully mixing an indium-containing precursor with an inert carrier gas and hydrogen sulfide in controlled ratios, ensuring the hydrogen sulfide concentration remains below 1% by volume. This allows the formation of a compact, high-quality indium sulfide thin film at relatively low temperatures (100°C–275°C), suitable especially for use in solar cells as buffer layers.

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• Buffer layers in thin-film solar cells, especially as a non-toxic replacement for CdS buffers.
• Semiconductor devices requiring N-type metal sulfide layers.
• Flexible electronics and substrates that require low-temperature film deposition.
• Photovoltaic modules that need cost-effective, scalable, and environmentally friendly manufacturing processes.
• Sensors and optoelectronic devices utilizing indium sulfide thin films.

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• Enables the direct and uniform deposition of high-quality indium sulfide thin films at low temperatures, compatible with sensitive or flexible substrates.
• Reduces use of toxic materials, offering a safer alternative to cadmium sulfide in solar cell manufacturing.
• Cost-effective and scalable process that operates at atmospheric pressure, eliminating the need for vacuum equipment.
• Improves solar cell performance by providing a suitable buffer layer with good interface properties.
• Allows for conformal coatings on complex 3D surfaces, increasing versatility and application range.

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Patent Abstract

An atmospheric pressure chemical vapor deposition method for producing an N-type semiconductive metal sulfide thin film on a heated substrate includes converting an indium-containing precursor to at least one of a liquid phase and a gaseous phase. The indium-containing precursor is mixed with an inert carrier gas stream and hydrogen sulfide in a mixing zone so as to form a mixed precursor. A substrate is heated to a temperature in a range of 100° C. to 275° C. and the mixed precursor is directed onto the substrate. The hydrogen sulfide is supplied at a rate so as to obtain an absolute concentration of hydrogen sulfide in the mixing zone of no more than 1% by volume. The In-concentration of the indium containing precursor is selected so as to produce a compact indium sulfide film.