Solar cell of the Schottky type with plasmonically active nanoparticles

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This invention describes an advanced Schottky-type solar cell that incorporates plasmonically active metal nanoparticles, such as gold or silver, on top of a crystalline silicon absorber layer. These nanoparticles enhance light absorption via plasmonic effects, while their placement and a special doping pattern in the silicon optimize how photo-generated electrical charges are collected. The solar cell structure separates the roles of current conduction and light absorption by using non-plasmonic metals for current-collecting contacts and highly plasmonic metals for light enhancement. An insulating layer electrically isolates these components, and the doping profile below the nanoparticles is adjusted to further improve efficiency.

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• High-efficiency solar panels for residential and commercial buildings.
• Portable solar-powered devices and chargers.
• Flexible or lightweight solar cells for wearables and building integration.
• Solar cells for remote or off-grid energy generation.
• Photoelectrochemical systems for direct solar fuel generation (e.g., hydrogen from water splitting).
• Solar energy harvesting in space applications.

BenefitsContent extracted from patent full text and abstract with AI.

• Significantly increases light absorption and conversion efficiency using plasmonic nanoparticles.
• Reduces recombination and shading losses by separating electrical and optical functions.
• Customized doping profile enhances charge collection, minimizing energy loss.
• Flexible design can suit both rigid and flexible solar cell formats.
• Potential for higher efficiency at lower material costs by maximizing absorber utility.
• Improved long-term stability due to protective insulating layers around nanoparticles.
• Suitable for miniaturization and advanced architectural integrations.

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Patent Abstract

The solar cell (00) has plasmonic active nanoparticles (04) that are arranged between emitter contact portions (03) on a crystalline silicon absorber layer (01). The nanoparticles are surrounded by an insulation layer (02). The doping concentration (N1D) of a primary absorber region having specific charge carrier type is set higher than the doping concentration (N2D) of a secondary absorber region below the nanoparticles in the absorber layer. The doping concentration (N2D) of the secondary absorber region is unchanged below the emitter contact portions.