Reactive Magnetron Sputtering for the Large-Scale Deposition of Chalcopyrite Absorber Layers for Thin Layer Solar Cells

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This patent describes a specialized method for depositing chalcopyrite absorber layers on large areas using reactive magnetron sputtering. The technique carefully controls the introduction and composition of gases, substrate temperature, pressure, target arrangement, and plasma excitation to efficiently produce high-quality, defect-free absorber layers suitable for thin-film solar cells. Uniquely, it enables copper-poor (indium-rich) layer growth and eliminates the need for hazardous wet chemical post-treatments, supporting the production of efficient and scalable thin-film solar cells at lower temperatures.

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• Manufacturing of high-efficiency thin-film solar cells for renewable energy.
• Large-scale industrial production of solar panels with chalcopyrite (e.g., CuInS2, CuInSe2) absorber layers.
• Integration of flexible solar modules on polymer substrates due to the lower process temperatures.
• Production facilities seeking to transition from batch to continuous (roll-to-roll) processing of solar cells.
• Development of tandem or gradient bandgap solar cells through customizable absorber compositions.

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• Enables large-area, scalable, and cost-effective production of thin-film solar cells.
• Reduces manufacturing complexity by avoiding hazardous wet chemical post-processing (e.g., KCN etching).
• Allows precise control of material stoichiometry and layer quality, improving device efficiency.
• Supports lower substrate temperatures (350–500°C), enabling the use of flexible or temperature-sensitive substrates.
• Facilitates the creation of absorber layers with low defect densities, key for high photovoltaic performance.
• Permits creation of compositional gradients (such as bandgap grading) for advanced cell architectures.
• Improves the safety and environmental profile of solar cell manufacturing by reducing toxic chemical usage.

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Patent Abstract

A method of reactive magnetron sputtering for large-area deposition of a chalcopyrite absorber layer for thin-film solar cells on a substrate, using at least one magnetron sputter source with at least one copper target, and using an inert gas and a chalcogen-containing reactive gas in a magnetron plasma, includes introducing the chalcogen-containing reactive gas directly at the substrate. The chalcogen-containing reactive gas fraction is set at 5 to 30% of the inert gas fraction in the magnetron plasma. A sputtering pressure of between 1 and 2 Pa, is set. A negative bias voltage is applied to the substrate. The magnetron plasma is excited by rapid frequency AC voltage above 6 MHz. The substrate is heated to a temperature between 350° C. and 500° C. Low-copper deposition is performed by disposing different targets serially in the at least one magnetron sputter source and operating the targets at the same sputtering power, or by disposing same targets in the at least one magnetron sputter source and operating the targets at different sputtering powers so as to obtain stoichiometry gradients.