Solar cell has photo-active, semiconducting absorber layer, where alternating adjacent arrangement of electrically insulating passivation areas on back of absorber layer with thickness

Publication: DE102009024807B3
Published: 2010-10-07
Family Size: 9
Granted: Yes (4/9)

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes a solar cell design that uses alternating, electrically insulating passivation areas with opposite surface charges (positive and negative) on the backside of a semiconducting absorber layer, typically silicon. These passivation layers, made from materials such as silicon nitride and aluminum oxide, create strong electric fields that help separate and collect photogenerated charge carriers efficiently. The contacts are placed on the back, minimizing recombination losses and alignment complexity. A method for manufacturing such solar cells, including nanostructured contact openings, is also covered.

Use CasesContent extracted from patent full text and abstract with AI.

  • High-efficiency photovoltaic panels for residential or commercial solar energy systems.
  • Integration into solar modules used in consumer electronics or automotive applications requiring thin, efficient solar cells.
  • Large-area solar farms seeking to maximize energy conversion with improved cell designs.
  • Specialty solar panels for space applications where reliability and efficiency are critical.
  • Low-cost solar panel manufacturing by simplifying the cell structure and reducing alignment needs.

BenefitsContent extracted from patent full text and abstract with AI.

  • Increases solar cell efficiency by reducing surface recombination of charge carriers through advanced passivation.
  • Allows for simplified cell fabrication by eliminating complex alignment and structuring steps.
  • Enables use of both intrinsic and lightly doped absorber layers, which can be less prone to defects and losses.
  • Supports all electrical contacts on the cell's backside, reducing shading and optimizing light capture on the front surface.
  • Compatible with scalable manufacturing processes including nano-scale structuring for dense contact arrays.
  • Applicable to a wide range of semiconductor materials, providing design flexibility.

Technical Classifications (CPCs)

Main Classifications

Electrical & Electronic Tech

Sub Classifications

Semiconductor & Solid-State Devices

CPC Codes

H10F10/146H10F71/00H10F71/121H10F77/219H10F77/227

Inventors & Applicants

Applicants

Helmholtz Zent B Mat & Energ

Patent Abstract

The solar cell has a photo-active, semiconducting absorber layer (03). An alternating adjacent arrangement of electrically insulating passivation areas (04,05) on a back of absorber layer with a thickness. The intrinsic or endowed silicon is provided as material for absorber layer. The silicon nitride with a high positive surface charge and alumina with a high negative surface charge are provided as materials for passivation areas. A metal, particularly aluminum or a transparency conductive oxide, particularly zinc oxide or indium tin oxide is provided as material for contact elements. An independent claim is also included for a manufacturing method for a solar cell.

Key Information

Publication No.

DE102009024807B3

Family ID

42675257

Publication Date

2010-10-07

Application No.

DE102009024807A

Application Date

2009-06-02

Priority Date

2009-06-02

Granted

Yes (4/9)

Possible Cooperation

For further information please contact the transfer office.