Method for Producing a 2D Material, 2D Material and Its Applications

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The invention describes a method for producing 2D materials, such as graphene or other crystalline monolayers, with controlled lattice defects arranged in specific geometric patterns. These defects are intentionally created by irradiating the 2D material with particles (like ions), and are then stabilized or functionalized by binding specific impurity atoms to the defect sites. The approach allows precise control over the electronic, optical, magnetic, and chemical properties of the resulting 2D material, making it a versatile platform for advanced device fabrication.

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• Fabrication of next-generation electronic devices such as transistors using precisely engineered 2D materials.
• Production of highly sensitive sensors (chemical, magnetic, or optical) with tunable detection properties.
• Creation of 2D material-based light-emitting devices (LEDs) or photodetectors with custom optical properties.
• Manufacture of van-der-Waals heterostructures for use in quantum computing, optoelectronics, or energy devices.
• Development of materials with engineered nucleation centers to promote controlled epitaxial growth in device manufacturing.

BenefitsContent extracted from patent full text and abstract with AI.

• Precise spatial control of defect formation enables reproducible tuning of material properties.
• Scalable and routine production method suitable for industrial applications.
• Enhanced stability of 2D materials during processing and handling due to defect termination with impurity atoms.
• Ability to create customized electronic, magnetic, and optical properties tailored to specific application needs.
• Improved reliability and homogeneity in the fabrication of heterostructures and electronic components.
• Versatile compatibility with various crystalline materials, not limited to graphene, broadening the range of potential applications.

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Inventors & Applicants

Patent Abstract

The invention relates to a method for producing a 2D material (100), which method comprises producing an atom layer (10) of a crystalline substance (11), such as graphene, on a carrier substrate (20), and irradiating the atom layer (10) with particles (30) in such a way that lattice defects (12) are produced in the atom layer (10), the lattice defects (12) being produced at defect positions according to a specified geometric pattern (13) along the atom layer (10), and termination of the lattice defects (12) is provided using impurity atoms (15, 16) which couple to unsaturated bonds of the lattice defects (12). The invention also relates to a 2D material in which lattice defects (12) are arranged at defect positions according to a specified geometric pattern (13) and are terminated using impurity atoms (14) which are coupled to unsaturated bonds of the lattice defects (12).