Method for Producing a Heterojunction Having a Dual Buffer Layer Containing at Least ZnO and Heterojunction with Dual Buffer Layer

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This patent describes a new method for producing a heterojunction contact for thin-film solar cells, specifically between a chalcogenide-based semiconductor (such as CIS) and a zinc oxide (ZnO) window layer. The invention creates a double-layered buffer between these materials, consisting of an intrinsic ZnX layer (where X can be S, Se, or Te) and a ZnO layer, without using toxic cadmium sulfide (CdS) or any wet-chemical process. The method leverages metal-organic molecular beam epitaxy (MOMBE) to enable inline, industrial-scale solar cell manufacturing, eliminating certain hazardous steps and improving semiconductor interface quality.

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• Manufacturing of cadmium-free CIS (copper indium selenide/sulfide) thin-film solar panels.
• Inline, industrial scale production of chalcogenide-based photovoltaic modules.
• Semiconductor device fabrication requiring improved electronic interface quality between layers.
• Development of environmentally friendly photovoltaic technologies.

BenefitsContent extracted from patent full text and abstract with AI.

• Eliminates the need for toxic cadmium-based (CdS) buffer layers, making solar cell production more environmentally friendly.
• Removes dependence on wet-chemical processing, facilitating integration into modern vacuum-based, inline production lines for higher efficiency and consistency.
• Enables better electronic band alignment at the heterojunction, potentially increasing solar cell efficiency and open-circuit voltage.
• Inline process allows for higher production throughput and lower manufacturing costs.
• Reduces formation of unwanted copper sulfide (CuS) residues, improving device reliability.

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Patent Abstract

A method for producing a heterocontact, which has a double buffer layer that is free from phase shift and comprises at least ZnO, between an active chalcogenide-based semiconductor layer and a ZnO window contact layer is to be provided, which comprises no wet-chemical process steps and in particular fits in an inline production process for CIS thin-film solar arrays, while not requiring the use of CdS for the buffer layer and forms no excess CuS on the surface. The solution according to the invention provides for the production of a direct heterocontact between a chalcogenide-based semiconductor layer and a ZnO window contact layer by means of a MOMBE method, said heterocontact comprises a buffer layer made of ZnX, where X = S, Se, Te, and ZnO, made of two partial layers free from phase shift.