Method and Arrangement for Producing an n-Type Indium Sulfide Thin Film

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This invention describes an improved method and arrangement for producing thin layers of n-type semiconducting indium sulfide (In2S3), using a spray-based process combined with atmospheric pressure chemical vapor deposition (CVD). The process involves spraying an indium-containing precursor onto a heated substrate while simultaneously introducing a controlled low concentration of hydrogen sulfide gas. This approach leads to the formation of highly compact and homogeneous indium sulfide thin films. The method is notable for operating completely at atmospheric pressure, making it simpler and more cost-effective. These high-quality thin films are especially suitable as buffer layers in thin-film solar cells, offering a non-toxic alternative to cadmium sulfide layers.

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• Manufacture of buffer layers in thin-film solar cells, such as CIGS (Copper Indium Gallium Selenide) cells.
• Production of n-type indium sulfide layers for other semiconductor devices requiring high-quality thin films.
• Application in photovoltaic modules where cadmium-free, environmentally friendly buffer layers are desired.
• Fabrication of electronic and optoelectronic devices (e.g., photodetectors, thin-film transistors) needing uniform thin semiconductor films.

BenefitsContent extracted from patent full text and abstract with AI.

• Enables industrial-scale production of high-quality indium sulfide thin films at atmospheric pressure, reducing the need for complex vacuum equipment.
• Produces homogeneous, compact and defect-minimized films, improving device performance and reliability.
• Faster layer growth and improved material utilization, resulting in more efficient manufacturing and reduced waste.
• Safer and more environmentally friendly than traditional cadmium-based processes, helping to meet regulatory and sustainability requirements.
• Flexible for both batch and inline production, suitable for various industrial manufacturing workflows.

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Patent Abstract

The invention relates to a method, known as "spray ILGAR method" for producing indium sulfide-thin layers. Said method consists of a method phase I (deposition of a solid indium-precursor on the substrate) and a subsequent method phase II (ion exchange reaction of the indium-precursor with hydrogen sulphide gas), said phases being continuously carried out at atmospheric pressure. The aim of the invention is to further improve spray ILGAR by maintaining said advantages such that in phase I a CVD step is carried out simultaneously with the overflow of the substrate (SU) that is guided for additional deposition of reaction reactive indium on the substrate (SU). A certain amount of hydrogen sulphide (H2S) is simultaneously supplied to the precursor (PRln(g/fl)) containing dissolved or gaseous indium such that the absolute concentration of the hydrogen sulphide (H2S) is equal to or less than 1 vol % in a mixed range (MP). In the method phase I, the substrate (SU) is heated to a temperature of between 100°C and 275°C such that no undesired powder formation in the gas phase can take place. In special batch or inline arrangements, very compact, homogeneous indium sulfide thin layers that can be used as buffer layers in solar cells in a particularly advantageous manner, are produced.