Molecular lithography process for nanopattern generation in a substrate, comprises producing a mask structure with a self-styled organization, from single unbranched macromolecules with negative load

Publication: DE102009037011B3
Published: 2011-05-12
Family Size: 2
Granted: Yes (1/2)

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes a molecular lithography process that uses single, unbranched, negatively charged macromolecules (like DNA) as masks to create nanopatterns on substrates. The process involves guiding and stretching these macromolecules in a transport fluid using controlled electric fields, then transferring their pattern onto a substrate coated with a negative-photoresist, followed by photolithography processing.

Use CasesContent extracted from patent full text and abstract with AI.

  • Creating high-resolution nanostructures for electronics and semiconductor manufacturing
  • Nanoscale patterning for advanced photonic devices
  • Fabrication of nanotechnology-based sensors and biosensors
  • Development of lab-on-a-chip diagnostic devices
  • Preparation of templates for nanoimprinting and material science applications

BenefitsContent extracted from patent full text and abstract with AI.

  • Enables extremely fine and precise nanopatterning, surpassing traditional lithography
  • Potential for cost-effective large-scale nanopattern production
  • Utilizes biomolecules like DNA, allowing customizable and self-organized mask structures
  • Greater control over pattern orientation and placement via electric fields
  • Supports advancements in miniaturization for electronics, photonics, and biotechnology

Technical Classifications (CPCs)

Main Classifications

Manufacturing & Transport

Sub Classifications

Nanotechnology

Physical & Chemical Processes

CPC Codes

B01L3/502707B82B3/0014B82Y10/00

Inventors & Applicants

Applicants

Helmholtz Zent B Mat & Energ

Patent Abstract

The molecular lithography process for nanopattern generation in a substrate (19) with a mask structure (16) from single unbranched macromolecules (09), comprises producing the mask structure with a self-styled organization, from single unbranched macromolecules with negative load, transporting and stretching the unbranched macromolecules in a flowing transport fluid (05) under influence of a pressure gradient or potential gradient of electric longitudinal fields (11) with adjustable field strength and constant polarity in passage direction of an entropic barrier. The molecular lithography process for nanopattern generation in a substrate (19) with a mask structure (16) from single unbranched macromolecules (09), comprises producing the mask structure with a self-styled organization, from single unbranched macromolecules with negative load, transporting and stretching the unbranched macromolecules in a flowing transport fluid (05) under influence of a pressure gradient or potential gradient of electric longitudinal fields (11) with adjustable field strength and constant polarity in passage direction of an entropic barrier with the plus pole at output of the entropic barrier in the passage direction of the entropic barrier, and deflecting the unbranched macromolecules during its passage through the entropic barrier in a first plane from the passage direction through applying a first electric transverse field with adjustable field strength and deflectable polarity on the entropic barrier in a first transverse direction to passage direction, applying the mask structure in contact with a chemically reinforced negative-photoresist as substrate, completely processing the negative-photoresist through light exposure, and heating, generating and removing the unbranched macromolecules from the substrate from ready-processed negative-photoresist. The unbranched macromolecules are deflected during its passage through the entropic barrier also in a second plane from the passage direction through applying a second electric transverse field with adjustable field strength and deflecting poles on the entropic barrier in a second transverse direction to passage direction. The entropic barrier is used with a formation of electric local fields within the entropic barrier. The negative-photoresist is applied in the entropic barrier after the production of the mask structure and discharging of the transport fluid. The negative-photoresist is used as transport fluid. The entropic barrier is used in the form of a photonic crystal in the formation of a nanocolumn field. The individual nanocolumn is metallized and electrically controlled for forming the electric local fields. The metallization is carried out with thin layer electrode materials. The electric control is caused for linear guiding of unbranched macromolecules over direct current and for the horizontal and vertical guiding over alternating current, where the electric field strength is 5-100 V/cm. The biomolecules of DNA is used as unbranched macromolecules with negative load. The UV-sensitive negative-photoresist is used. The denatured, unbranched macromolecules are flushed out from the substrate under external pressure- and/or electric field influence.

Key Information

Publication No.

DE102009037011B3

Family ID

43853263

Publication Date

2011-05-12

Application No.

DE102009037011A

Application Date

2009-08-08

Priority Date

2009-08-08

Granted

Yes (1/2)

Possible Cooperation

For further information please contact the transfer office.