Semiconductor Device with Front and Back Electrode and Method for Its Manufacture

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This invention describes a semiconductor device featuring both front-side and back-side electrodes, designed with multiple dielectric (insulating) layers and a conductive layer sandwiched in between. The dielectric layers have contact openings that are deliberately offset from each other, enabling improved electrical connection while minimizing contamination and defects. The design aims for superior passivation of the active semiconductor layer, excellent optical properties, and stability at high processing temperatures. The patent also covers the method for manufacturing such a device, particularly useful for thin-film silicon solar cells.

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• High-efficiency thin-film silicon solar cells for renewable energy generation
• Photodiodes and light detectors requiring high-quality passivation and electrical contact
• Semiconductor sensors or devices needing reliable high-temperature processing
• Multi-junction solar cells, such as combinations of silicon and perovskite layers
• Advanced optoelectronic devices that benefit from improved rear-side contact and defect reduction

BenefitsContent extracted from patent full text and abstract with AI.

• Reduces contamination and defects in the active semiconductor layers by hindering impurity diffusion.
• Provides excellent electrical connection while maintaining surface passivation for higher efficiency.
• Enables the use of high-temperature processing steps without degrading electrical or optical properties.
• Improves optical performance (such as light reflection and absorption) for better device efficiency.
• Allows simpler and potentially cheaper manufacturing compared to interlaced or complex contact patterns.
• Supports versatile device architectures, including both single and multi-junction semiconductor devices.

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Patent Abstract

The invention relates to a semiconductor component with front and rear-sided electrodes, comprising, on a substrate, at least one contact layer for charge carriers having a conductively type the same as the rear-sided electrode, on which at least one active semiconductor layer and a front-sided electrode, and at least one intermediate layer is arranged between the rear-sided electrode and the at least one active semiconductor layer. According to the invention, at least two electrically insulating dielectric intermediate layers are provided, between which at least one electrically conductive layer is arranged. The at least two electrically insulating dielectric layers comprise contact openings which are offset to each other such that the rear-sided electrode, which is formed over the total surface, and the at least one active semiconductor layer are electrically conductively connected. The invention also relates to a method for the production thereof.