Transistor assembly and method of its fabrication
Simple SummaryContent extracted from patent full text and abstract with AI.
This invention describes a transistor assembly made by integrating semiconductor material vertically into microscopic holes inside a flexible film laminate. The laminate is composed of two plastic (polymer or polyester) films with a metal layer sandwiched between them. The process enables the creation of mechanically robust, bendable, and stretchable transistors by metallizing the top and bottom sides of the film, making electrical contacts to the semiconductor that fills the holes. The method permits fabrication of extremely small (nanometer-scale) transistors with high mechanical durability, suitable for flexible electronics.
Use CasesContent extracted from patent full text and abstract with AI.
- Flexible display panels (e.g., e-paper, foldable screens)
- Wearable electronic devices and sensors
- Flexible smart labels and RFID tags
- Microscale and nanoscale electronic circuits with mechanical flexibility
- Medical devices requiring flexible electronics
- Stretchable computing elements for textiles (smart clothing)
- Integration in curved or three-dimensional surfaces where standard rigid electronics are unsuitable
BenefitsContent extracted from patent full text and abstract with AI.
- High mechanical strength despite flexibility and stretchability
- Prevents transistor malfunction when the substrate is bent or stretched
- Allows for nanometer-scale transistor fabrication without complex lithography
- Enables integration of large numbers of transistors into flexible or unconventional substrates
- Improved durability and reliability for devices exposed to mechanical stress
- Potential for cost-efficient manufacturing due to simplified production steps
- Supports miniaturization and higher density integration of electronic components
Technical Classifications (CPCs)
Main Classifications
Electrical & Electronic Tech
Sub Classifications
Semiconductor & Solid-State Devices
CPC Codes
Inventors & Applicants
Inventors
Applicants
Helmholtz Zent B Mat & Energ
Patent Abstract
A transistor assembly with semiconductor material vertically introduced into micro holes (4) in a pliable a film laminate consisting of two plastic films (1, 3) with a metal layer (2) located therebetween. Said semiconductor material is provided with contacts (6, 7) by metalizing the top side and bottom side of the film laminate. The assembly is very strong by virtue of the fact that the film can be bent and stretched.
Key Information
Publication No.
US7579281B2
Family ID
7697404
Publication Date
2009-08-25
Application No.
US32721806A
Application Date
2006-01-09
Priority Date
2006-01-09
Granted
Yes (6/13)
Possible Cooperation
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